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NPN Epitaxial Silicon Transistor Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk Page: 1 / 1 HIGH VOLTAGE SWITCHING APPLICATIONS z Collector-Emitter Voltage: VCEO=400V z Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage V CBO 700 V Collector-Emitter Voltage V CEO 400 V Emitter-Base Voltage V EBO 9 V Collector Current I C 1500 mA Collector Dissipation P C 1500 mW Junction Temperature T J 150 oC Storage Temperature T STG -55~+150 oC Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Min Max Unit Collector-Base Breakdown Voltage BV CBO I C=1mA, IE=0 700 V Collector-Emitter Breakdown Voltage BV CEO I C=10mA, IB=0 400 V Emitter-Base Breakdown Voltage BV EBO I E=1mA, IC=0 9 V Collector Cut-off Current I CBO V CB=700V, IE=0 1 mA Collector Cut-off Current I CEO V CE=400V, IB=0 500 μA Emitter Cut-off Current I EBO V EB=9V, IC=0 1 mA DC Current Gain h FE(1) V CE=2V, IC=0.5A 8 40 h FE(2) V CE=10V, IC=0.5mA 5 Collector-Emitter Saturation Voltage V CE(sat) I C=1A IB=250mA 1 V Base-emitter Saturation Voltage V BE(sat) I C=1A, IB=250mA 1.2 V Base-emitter Voltage V BE I E=2A 3 V Transition Frequency F T V CE=10V, IC=100mA f=1MHz 5 MHz Fall Time t f IC=1A, I B1=-1B2=0.2mA, 0.5 µS Storage Time t s Vcc= 100V 2.5 µS hFE(1) CLASSIFICATION Classification hFE(1) 8-15 15-20 20-25 25-30 30-35 35-40 1. Base 2. Collector 3. Emitter TO-220