13003 DGNJDZ

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

TO-220 Plastic-Encapsulate Transistors

13003 TRANSISTOR (NPN)

FEATURES

  • power switching applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base V oltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 2 W TJ Junction Temperature 150 Tstg Storage Temperature -55 150 ELECTRICAL CHARACTERISTICS (T a=25 unless otherwise specified) Parameter Symbol S ymbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C =5mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO I C=10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO I E=2mA, IC=0 9 V Collector cut-off current I CBO V CB=700V,IE=0 1 mA Collector cut-off current I CEO V CE=400V,IB=0 0.5 mA Emitter cut-off current I EBO V EB=9V, IC=0 1 mA hFE1 V CE=5V, IC= 0.5 A 8 40 DC current gain hFE2 V CE=5V, IC= 1.5A 5 Collector-emitter saturation voltage VCE(sat) I C=1A,IB=0.25A 0.6 V Base-emitter saturation voltage VBE(sat) I C=1A,IB=0.25A 1.2 V Transition frequency fT V CE=10V,Ic=100mA, f =1MHz 5 MHz Fall time tf I C=1A, IB1=-IB2=0.2A, VCC=100V 0.5 µs CLASSIFICATION OF hFE1 Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 TO-220 1. BASE 2. COLLECTOR 3. EMITTER CLASSIFICATION OF tS Rank A1 A2 B1 B2 Range 2-2.5 ( s ) 2.5-3( s ) 3-3.5( s ) 3.5-4 ( s ) Storage time tS IC=250mA (UI9600) 2 4 s DONGGUAN NANJING ELECTRONICS LTD.,

A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP 2.540 TYP