13002 DGNJDZ

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 2

Technical content

TO-92 Plastic-Encapsulate Transistors TRANSISTOR（ NPN ）

FEATURES

power switching applications MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Parameter Value Unit V CBO Collector-Base Voltage 600 V V CEO Collector-Emitter Voltage 400 V V EBO Emitter-Base Voltage 6 V I C Collector Current -Continuous 0.8 A P C Collector Power Dissipation 0.9 W T J Junction Temperature 150 ℃ T stg Storage Temperature -55 ~150 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =100μA,I E =0 600 V Collector-emitter breakdown voltage V (BR)CEO I C =1mA,I B =0 400 V Emitter-base breakdown voltage V (BR)EBO I E = 100μA,I C =0 6 V I CBO V CB = 610V,I E =0 100 µA Collector cut-off current I CEO V CB = 405V,I E =0 100 µA Emitter cut-off current I EBO V EB = 6 V, I C =0 100 µA h FE1 V CE = 10 V, I C =200mA 9 40 Dc current gain h FE2 V CE = 10 V, I C =0.25mA 5 Collector-emitter saturation voltage V CE(sat) I C =200mA, I B =40mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =200mA, I B =40mA 1.1 V Transition frequency f T V CE =10V, I C =100mA f =1MHz

5 MHz

f 0.5 µs Storage time t s I C =1A, I =-I =0.2A V CC =100V 2.5 µs CLASSIFICATION OF h FE Range 9-15 15-20 20-25 25-30 30-35 35-40 TO-92 1.EMITTER 2. COLLECTOR 3. BASE B,Aug,2012 DONGGUAN NANJING ELECTRONICS LTD.,

0.1 1 10 100 200 400 600 800 1000 0 25 50 75 100 125 150 300 600 900 1200 1 10 100 100 1000 11 0 1 0 0 100 0.1 1 10 100 1000 0 200 400 600 800 1000 1200 0.1 100 02468 1 0 1 2 1 4 100 150 200 250 300 800 I C f T COMMON EMITTER V CE =10V T a =25 COLLECTOR CURRENT I C (mA) TRANSITION FREQUENCY f T (MHz) 800 β=5 I C V BEsat BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURREMT I C (mA) T a =100 T a =25 P C —— T a AMBIENT TEMPERATURE T a ( ) COLLECTOR POWER DISSIPATION P C (mW) 800 800 T a =100 T a =25 β=5 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURREMT I C (mA) 0.5 Typical Characteristics I C h FE T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE = 10V f=1MHz I E =0/I C T a =25 V CB EB C ob ib C ob C ib REVERSE VOLTAGE V (V) CAPACITANCE C (pF) COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (mV) I C —— V BE T a =25 T a =100 COMMON EMITTER V CE =10V Static Characteristic COMMON EMITTER T a =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 10mA 9mA 8mA 7mA 6mA 5mA 2mA 3mA 4mA I B =1mA B,Aug,2012