DATASHEET SEARCH SITE

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 1

Technical content

Dated : 22/08/2016 Re v: 01 SEMTECH ELECTRONICS LTD. 13002 NPN Silicon Epitaxial Planar Transistor High voltage power transistor Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 700 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage V EBO 9 V Collector Current I C 0.2 A Collector Current (Pulse) I CP 0.5 A Total Power Dissipation P tot 0.6 W Operating Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 10 V, IC = 10 µA at VCE = 10 V, IC = 100 mA at VCE = 10 V, IC = 200 mA hFE hFE hFE Collector Base Cutoff Current a t VCB = 700 V ICBO - 100 µA Emitter Base Cutoff Current at VEB = 7 V IEBO - 10 µA Collector Base Breakdown Voltage at IC = 10 mA V(BR)CBO 700 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 400 - V Emitter Base Breakdown Voltage at IE = 1 mA V(BR)EBO 9 - V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA at IC = 200 mA, IB = 20 mA VCEsat 0.5 2.5 V Transition Frequency a t VCE = 10 V, IC = 100 mA fT 4 - MHz 1. Emitter 2. Collector 3. Base TO-92 Plastic Package