13001-SOT23 YFWDIODE

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

■ Features

  • Power switching applications ■ Absolute Maximum Ratings Ta = 25℃ ■ Electrical Characteristics Ta = 25℃ ■ Classification of h fe(1) 13001 NPN Transistors 1.Base 2.Emitter 3.Collector Simplified outline(SOT-23) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100 μA, IE=0 800 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 500 V Emitter-base breakdown voltage V(BR)EBO IE=100 μA, IC=0 9 V Collector cut-off current ICBO VCB=600 V , IE=0 1 μA Collector cut-off current ICEO VCE=400V , IB=0 10 μA Emitter cut-off current IEBO VEB=9V , IC=0 1 μA DC current gain hFE VCE=20V, IC= 20mA 8 DC current gain hFE VCE=5V, IC= 1mA 8 30 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 20mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 20mA 1.2 V Symbol Parameter Value Units VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 0.2 A PC Collector Power Dissipation 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ Range 8-15 15-20 20-25 25-30 www.yfwdiode.com

■ Typical Characterisitics 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 100 0.4 0.6 0.8 1.0 100 0 10 20 30 40 50 COLLECTOR POWER DISSIPATION P C (W) AMBIENT TEMPERATURE T a ( ) P C — — T a V BE h FE — — I C — — 3 300.3 T a =100 T a =25 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) V CE =20V I C 200 300 3 023.0 C ob C ib REVERSE VOLTAGE V (V) f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib — — CAPACITANCE C (pF) 3030.3 β=5 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) T a =25 T a =100 200 I C V BEsat — — 300 3030.3 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) COLLECTOR CURRENT I C (mA) β=5 T a =25 T a =100 I C V CEsat — — 500 200 T a =25 T a =100 V CE =20V 200 COLLCETOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) 1.5mA 1.35mA 1.2mA 1.05mA 900uA 750uA 600uA 300uA 450uA I B =150uA Static Characteristic COMMON EMITTER T a =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 13001 www.yfwdiode.com

max. b p cD E e H E L p Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B A B 0 1 2 mm scale A 1.1 0.9 c X SOT-23 13001 www.yfwdiode.com