13001

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D a t e d : 1 3 / 0 4 / 2 0 1 6 C L R e v: 02 SEMTECH ELECTRONICS LTD. 13001 NPN Silicon Epitaxial Planar Transistor for high voltage and high speed switching applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage V CBO 500 V Collector Emitter Voltage V CEO 400 V Emitter Base Voltage V EBO 9 V Collector Current (DC) I C 0.3 A Total Power Dissipation Ptot 0.75 W Junction Temperature T j 150 OC Storage Temperature Range T stg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit DC Current Gain at VCE = 10 V, IC = 0.25 mA at VCE = 20 V, IC = 2 0 m A hFE hFE Collector Base Cutoff Current at VCB = 500 V ICBO - 100 µA Collector Emitter Cutoff Current at VCE = 400 V ICEO - 200 µA Emitter Base Cutoff Current at VEB = 9 V IEBO - 100 µA Collector Base Breakdown Voltage a t IC = 100 µA V(BR)CBO 500 - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 400 - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 9 - V Collector Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA VCE(sat) - 0.5 V Base Emitter Saturation Voltage at IC = 50 mA, IB = 10 mA VBE(sat) - 1.2 V Transition Frequency at VCE = 20 V, IC = 20 mA, f = 1 MHz fT 8 - MHz Storage Time at UI9600, IC = 100 mA ts - 3 μs Fall Time at UI9600, IC = 100 mA tf - 1 μs 1. Emitter 2. Collector 3. Base TO-92 Plastic Package

D a t e d : 1 3 / 0 4 / 2 0 1 6 C L R e v: 02 SEMTECH ELECTRONICS LTD. 13001