12T06AI-CW

12T06A-BW NELLSEMI

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Technical content

www.nellsemi.com Page 1 of 6 SEMICONDUCTOR 12T Series RoHS RoHS GA2 TRIACs, 12A Snubberless, and Standard Logic Level 1 2 3 TO-220AB (lnsulated) (12TxxAI) TO-220AB (non-Insulated) (12TxxA) SYMBOL IT(RMS)RMS on-state current (full sine wave) TO-263/TO-220AB ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 72 2A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100nsG GT r IGMPeak gate current 4 PG(AV)Average gate power dissipation 1 TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE 120 126 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS TO-220AB insulated T = 105ºCc T = 90ºCc G 2TO-263 (D PAK) (12TxxH)

FEATURES

APPLICATIONS

Low thermal resistance with clip bonding Low thermal resistance insulation ceramic for insulated TO-220AB package High commutation (4Q) or very high commutation (3Q) capability 12T series are UL certified (File ref: E320098) Packages are RoHS compliant ON/OFF or phase angle function in applications such as static relays, light dimmers and appliance motors speed controllers. The snubberless versions (with suffix W) are especially recommended for use on inductive loads, because of their high commutation performances. The 12T series provides an insulated tab (rated at 2500V ).RMS MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 12 A V mA5 to 50 600 to 1000

www.nellsemi.com Page 2 of 6 C I - II - III IV MAX. 100 mA ALL ALL MAX. I - III - IV MAX. mA II MIN. MIN. V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. QUADRANT 12Txxxx V = 12 V, R = 30ΩD L V = V , R = 3.3KΩ, D DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V , gate open, T = 125°CD DRM j (dI/dt)c = 5.3 A/ms, T = 125°Cj 1.3 0.2 V V mA V/µs V/µs 80 80 200 400 5 10 I = 17 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 0.85 V V µA mΩ STATIC CHARACTERISTICS UNITVALUE UNITTEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL 12Txxxx Unit I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms- IL MAX. MIN. V = 12 V, R = 30ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 500 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°Cj T = 125°Cj T = 125°Cj MAX. 3.5 10 50 1.3 0.2 15 60 20 70 35 80 40 1000 6.5 2.9 12- mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL TW SW BW 500 6.5 CW SNUBBERLESS and Logic level (3 quadrants) Standard (4 quadrants) I (1)GT VGT VGD (2)IH (2)dV/d t IL (2)(dV/dt)c (2)Rd SEMICONDUCTOR RoHS RoHS B (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS V = VD DRM V = VR RRM 12T Series

www.nellsemi.com Page 3 of 6 PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA Note: xx = voltage, yy = sensitivity 1000 V 12TxxA-B/ 12TxxAl-B 12TxxA-BW/12TxxAl-BW 12TxxA-C/12TxxAl-C 12TxxA-CW/12TxxAl-CW 12TxxA-SW/12TxxAl-SW 12TxxA-TW/12TxxAI-TW TYPE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB Standard Snubberless Standard Snubberless Logic level Logic level V V V V V VV VV VV V SEMICONDUCTOR RoHS RoHS 800 V V V V V V V THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.3 °C/W °C/W UNITVALUESYMBOL TO-220AB, TO-263 TO-220AB Insulated TO-220AB Insulated, TO-220AB 1.4 S = Copper surface under tab. 2S = 1 cm TO-263 10 mA 35 mA 50 mA 12TxxH -SW Snubberless Logic level V V V V V V V V V 12TxxH -CW 12TxxH -BW AI: Insulated TO-220AB package Snubberless 2D PAK 2D PAK 12T Series 2D PAK ORDERING INFORMATION SCHEME Triac series Current Voltage 12 = 12A 06 = 600V 08 = 800V B = 50mA Standard BW = 50mA Snubberless C = 25mA Standard CW = 35mA Snubberless SW = 10mA Logic Level TW = 5mA Logic Level

12 T 06 A - BW

10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) I Sensitivity GT 2H = TO-263 (D PAK)

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 12TxxAI-yy 12TxxAI-yy 2.3g 50 Tube 12TxxH-yy 12TxxH-yy 2TO-236(D PAK) 2.0g 50 TO-220AB (insulated) Tube

www.nellsemi.com Page 4 of 6 Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) P (W) I (A)T(RMS) 12510075502564 921 Fig.3 RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm)(full cycle) Fig.4 Relative variation of thermal impedance versus pulse duration. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1E-3 1E-2 1E-1 1E+0 K=[Z /R ]th th 5E+21E+21E+11E+01E-11E-20 25 50 75 100 125 I (A)T(RMS) 12T Series I (A)T(RMS) 10 11 128 TO-220AB ( )insulated TO-220AB TO-263 T (°C)C

2 D PAK

2(S=1cm ) T (°C)c tp(s) Zth(j-c) Zth(j-a) 100 I (A) Fig.5 On-state characteristics (maximum values). T max.j V = 0.85 Vto R = 35 mΩd T =T maxj j T =25°Cj V (V)TM 0 I (A)TSM Fig.6 Surge peak on-state current versus number of cycles. 1 10 100 1000 t=20ms One cycleNon repetitive T initial=25°Cj Repetitive T =90°Cc Number of cycles 100 110 120 130

www.nellsemi.com Page 5 of 6 SEMICONDUCTOR RoHS RoHS 100 1000 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 IGT I & IH L T (°C)j Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig.10 Relative variation of critical rate of of main current versus (dV/dt)c decrease (typical values). Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms.2 and corresponding value of l t. Fig.8 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). 2 2l (A), l t(A s)TSM l ,l ,l [T ] / l ,l ,l [T =25°C]GT H L j GT H L j 0.0 0.4 0.8 1.2 1.6 2.4 2.0 2.8 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.1 1.0 10.0 100.0 0.1 1.0 10.0 100.0 12T Series dI/dt limitation: 50A/µs T initial=25°Cj 2I t ITSM t (ms)p 0.01 0.10 1.00 10.00 SW CW/BW C B (dV/dt)c (V/µs) TW 4.5 5.0 (dV/dt)c (V/µs) Fig.11 Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [T ] (dl/dt)c [j T specified ]j 0 4 8 12 2016 T (°C)j 0 25 50 75 100 125 2Fig.12 D PAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) Rth(j-a)(°C/W) 2D PAK 2S(cm ) 24 3228 36 40

www.nellsemi.com Page 6 of 6 SEMICONDUCTOR RoHS RoHS Case Style 12T Series 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021)