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12PT_14 NELLSEMI

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SEMICONDUCTOR 12PT Series RoHS RoHS Sensitive and Standard SCRs, 12A SYMBOL IT(RMS)RMS on-state current full sine wave ITSMNon repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 98 2A s dI/dtCritical rate of rise of on-state current 50 IGMPeak gate current PG(AV)Average gate power dissipation TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE 140 145 F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F = 60 Hz T =125ºCj T = 125ºCj T = 125ºCj T = 20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Main Features Symbol Value Unit IT(RMS) V /VDRM RRM IGT 12 A V mA0.2 to 15 600 to 1000

DESCRIPTION

(180° conduction angle ) Average on-state current (180° conduction angle) IT(AV) 8 A 1 2 3 1 2 3 TO-220AB (Non-lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) I = 2xl , t ≤100nsG GT r 1 2 3 TO-220AB (lnsulated) (12PTxxF) (12PTxxG) (12PTxxA) (12PTxxAI) www.nellsemi.com Tc=105°C Tc=90°C TO-251/TO-252/TO-220AB/TO-263 TO-220AB insulated TO-251/TO-252/TO-220AB/TO-263 TO-220AB insulated Tc=105°C Tc=90°C Available either in sensitive or standard gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive ignition and voltage regulation circuits. Available in through-hole or surface-mount they provide an optimized performance discharge packages, in a limited space. G 2TO-263 (D PAK) (12PTxxH) 3(G) 1(K) 2(A)

SEMICONDUCTOR 12PT Series RoHS RoHS 12PTxxxx Unit IGT VGD IH mA dV/dt VTM IDRM IRRM mA IL V = 12 V, R = 33ΩD L V = V , R = 3.3KD DRM L Ω I = 500 mA, gate openT I = 1.2 IG GT V = 67% V gate openD DRM, 0.2 200 0.85 mA V V mA V/µs I = 24A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj V µA STANDARD ELECTRICAL SPECIFICATIONS (TJ = 25 unless otherwise specified)ºC, TEST CONDITIONS SYMBOL V = VDRM RRM 1.6 Min. Max. Max. Min. Max. Min. Max. Max. Max. THERMAL RESISTANCE Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) 1.3 °C/W °C/W UNITVALUESYMBOL Parameter IPAK/DPAK/TO-220AB/TO-263 D-PAK I-PAK TO-220AB, TO-220AB insulated 4.6 2S = 0.5 cm VGT www.nellsemi.com 0.5 T 1.3 T = 125°Cj Max. 30 30 60 Vto Threshold voltage V Rd T = 125°Cj Max. 30 mΩ mA T = 25°Cj T = 125°Cj Dynamic resistance 12PTxxxx-S Unit IGT VGD mA dV/dt VTM IDRM IRRM mA IH V = 12 V, R = 140ΩD L V = V , R = 3.3KD DRM L Ω, R =220ΩGK I = 10 µARG I = 50 mA R = 1 KΩT , GK V = 67% V R = 220ΩD DRM GK, 0.1 0.85 µA V V V/µs I = 24A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj V µA SENSITIVE ELECTRICAL CHARACTERISTICS (Tj = 25 unless otherwise specified)ºC, TEST CONDITIONS SYMBOL V = V R = 220ΩDRM RRM, GK 1.6 Max. Max. Min. Max. Min. Max. Max. Max. VGT 0.8 200 T = 125°Cj Vto Threshold voltage V Rd T = 125°Cj Max. 30 mΩ V T = 25°Cj T = 125°Cj Dynamic resistance VRG Min. IL I = 1 mA R = 1 KΩG , GK Max. mA TO-220AB insulated S=Copper surface under tab D²PAK2S = 1 cm 100

ORDERING INFORMATION SCHEME SCR series Package type Current Voltage Code I GT Sensitivity A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) 12 = 12A, IT(RMS) T = 0.5~5 mA

12 PT 06 - S

06 = 600V F = TO-251 (I-PAK) G = TO-252 (D-PAK) 08 = 800V www.nellsemi.com

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 12PTxxAI-y 12PTxxAI-y 2.3g 50 Tube 12PTxxF-y 12PTxxF-y TO-251(I-PAK) 0.40g 80 12PTxxG-y 12PTxxG-y 0.38g 80 TubeTO-252(D-PAK) TO-220AB (insulated) Tube Blank = 2~15 mA Note: xx = voltage, y = sensitivity 10 = 1000V PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY 600 V 200 µA 1000 V 12PTxxA-S/12PTxxAl-S 12PTxxF-S 12PTxxG-S V VV V 800 V V V PACKAGE TO-220AB D-PAK VV V VV V V V V 12PTxxA-T/12PTxxAl-T VV V V V V V V V V V V 12PTxxA/12PTxxAl 12PTxxF-T 12PTxxF 12PTxxG-T 12PTxxG D-PAK D-PAK I-PAK I-PAK I-PAK TO-220AB TO-220AB 0.5~5 mA 2~15 mA 200 µA 0.5~5 mA 2~15 mA 200 µA 0.5~5 mA 2~15 mA S = 70~200 µA 12PTxxH-S 20 µA D²-PAK D²-PAK D²-PAK 0.5~5 mA 2~15 mA V V V V V V V V V 12PTxxH-T 12PTxxH H = TO-263 (D²PAK) 12PTxxH-y 12PTxxH-y 50 Tube2.0gTO-263(D²-PAK)

0.0 0.2 0.4 0.6 0.8 1.6 12PT Series 0.01 0.10 1.00 Fig.5 Relative variation of thermal impedance Junction to ambient versus pulse duration Fig.6 Relative variation of gate trigger and holding current versus junction temperature for I =200µA GT -40 www.nellsemi.com Fig.3 Average and DC on-state current versus ambient temperature (DPAK) Fig.4 Relative variation of thermal impedance junction to case versus pulse duration 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 1E+0 0.1 0.2 0.5 1.0 I (AV)(A)T Fig.1 Maximum average power dissipation versus average on-state current Fig.2 Average and DC on-state current versus case temperature P(W) 0 1 2 4 5 6 0 25 50 75 100 125 I (A)T(AV) 1E+11E-2 1E-1 1E+0 1E+2 5E+2 1.0 1.2 1.4 1.8 2.0 -20 0 20 40 60 80 100 120 140 1E+11E+21E+3 I ,I ,I [Tj] / I ,I ,I [Tj=25°C]GT H L GT H L K=[Zth(j-c)/Rth(j-c)] K=[Zth(j-a)/Rth(j-a)] α=180° 360° αI (A)T(AV) 3 7 8 9 T (°C)case DC α=180° Insulated TO-220AB TO-251/TO-252 TO-263/TO-220AB Device mounted on F R4 with Recommended pad layout T (°C)amb α=180° DPAK DC D²PAK 3.0 t (s)p t (s)p D²PAK TO-220AB/IPAK Device mounted on F R4 with Recommended pad layout DPAK IGT l & ILH R =1KΩGK T (°C)j (DANK)

I (A)STM Fig.11 Surge peak on-state current versus number of cycles Fig.12 Non-repetitive surge peak on-state current and corresponding values of l²t versus www.nellsemi.com 0.1 0 200 400 1.0 Fig.9 Relative variation of dV/dt immunity versus gate-cathode resistance 0.0 0.5 1.0 1.5 0.0 0.2 4.0 5.0 -20 0 6020-40 40 3.5 4.5 100 14080 120 0.4 dV/dt[R ] / dV/dt[R =220Ω]GK GK Fig.7 Relative variation of gate trigger and holding current versus junction temperature Fig.8 Relative variation of holding current versus gate-cathode resistance (typical values) dV/dt[C ] / dV/dt[R =220Ω]GK GK 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1E-2 1E-1 1E+0 1E+1 600 800 1000 1200 10.0 25 7550 125 150100 2.0 2.5 3.0 0.0110 1 100 1000 100 0.10 1.00 10.00 100 1000 IH[RGK] / IH[RGK=1KΩ]I ,I ,I [Tj] / I ,I ,I [Tj=25°C]GT H L GT H L 3.0 2.5 2.0 1.5 1.0 0.5 0.0 (Typical values) Fig.10 Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for I =200µA GT I (A),I²t(A²s)TSM 5mA & 15mA Series IGT l & ILH T (°C)j R (KΩ)GK Tj=125°C V =0.67 X VD DRM R (KΩ)GK C (nF)GK V =0.67 X VD DRM Tj=125°C R =220ΩGK 3.5 4.0 t =10msp One cycle Non repetitive T initial=25°Cj Number of cycles 110 120 130 140 150 Repetitive Tc=105°C I²t ITSM Tj inital=25°C t (ms)p dI/dt Iimitation 2000 200µA Series Tj=25°C sinusoidal pulse width

www.nellsemi.com Fig.13 On-state characteristics (maximum values) Fig.14 Thermal resistance junction to ambient versus copper surface under tab (D²PAK) 100 200 0 2 4 6 8 10 12 14 16 18 20 100 I (A)TM Rth(j-a)(°C/W) Case Style 6.4(0.52) 6.6(0.26) 5.2(0.204) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) TO-251 (I-PAK) 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB (G)3 1(A1) (A2) VTM(V) Tj=25°C Tj=max Tjmax Vt0=0.85V Rd=30mΩ 4.5 5.0 S(cm²) Epoxy printed circuit board FR4 copper thickness = 35µm DPAK D²PAK

1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) Case Style Page 7 of 7 (G)3 1(A1) (A2) www.nellsemi.com 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021)

Selected Specification

Nell Semiconductor Co.,... 12PTxxA overview.

Summary

Sensitive and Standard SCRs, 12A

Description

Sensitive and Standard SCRs, 12A

Source title 12PTxxA Datasheet(PDF) - Nell Semiconductor Co., Ltd

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