12N65 ISC

Document overview

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Technical content

INCHANGE Semiconductor isc Product Specification isc websit e：： ：： www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 12 N65

  • · ··FEATURES
  • Drain Current –ID= 12A@ T C=25 ℃
  • Drain Source Voltage- : V DSS = 650V (Min)
  • Static Drain-Source On-Resistance : R DS(on) = 0.85 Ω(Max)
  • Avalanche Energy Specified
  • Fast Switching
  • Simple Drive Requirements
  • · ··DESCRITION
  • Designed for high efficiency switch mode power supply.
  • · ··ABSOLUTE MAXIMUM RATINGS(T a=25 ℃℃ ℃℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A PD Total Dissipation @T C=25 ℃ 225 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
  • · ··THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.56 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

INCHANGE Semiconductor isc Product Specification isc websit e：： ：： www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor 12N65

ELECTRICAL CHARACTERISTICS

TC=25 ℃℃ ℃℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS = 0; I D= 0.25mA 650 V VGS (th ) Gate Threshold Voltage V DS = V GS ; I D= 0.25mA 2 4 V RDS( on ) Drain-Source On-Resistance VGS = 10V; I D= 6.0A 0.85 Ω IGSS Gate-Body Leakage Current VGS = ±30V; VDS = 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS = 650V; V GS = 0 1 μA VSD Forward On-Voltage I S= 12A; V GS = 0 1.4 V

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