12N60H KIA

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12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA12N60HN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhigh voltage,highspeedpowerswitchingapplicationssuchashighefficiencyswitchedmodepowersupplies, activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology. 2. Features n RDS(on)= 0.53Ω@ VGS= 10 V n Low gate charge ( typical 52nC) n Fast switching capability n avalanche energy specified n Improved dv/dt capability 3. Pinconfiguration 1of7 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Rating Units TO-220 TO-220F Drain-sourcevoltage VDSS 600 V Drain-sourcevoltage VGSS ±30 V Draincurrentcontinuous TC=25 ºC ID 12.0 12.0* A TC=100 ºC 7.4 7.4* A Draincurrentpulsed (note1) IDP 48.0 48* A Avalancheenergy Repetitive (note1) EAR 23.1 mJ Singlepulse(note2) EAS 865 mJ Peakdioderecoverydv/dt (note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25 ºC PD 231 54 W derateabove25 ºC 1.85 0.43 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Rating UnitTO-220 TO-220F Thermalresistance,Junction--ambient RthJA 62.5 ºC/W Thermalresistance,case-to-sinktyp. RthCS 0.5 - ºC/W Thermalresistance,Junction-case RthJC 0.54 2.33 ºC/W 2of7 Rev1.1JAN2014

12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 600 - - V Zerogatevoltagedraincurrent IDSS VDS=600V,V GS=0V - - 1 μA VDS=480V,T C=125ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.7 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=6.0A - 0.53 0.65 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 1850 - pF Outputcapacitance Coss - 180 - pF Reversetransfercapacitance Crss - 20 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=300V,ID=12.0A, RG=25Ω(note4,5) - 30 - ns Risetime tr - 90 - ns Turn-offdelaytime td(off) - 140 - ns falltime tf - 90 - ns Totalgatecharge Qg VDS=480V,ID=12.0A VGS=10V,(note4,5) - 52 - nC Gate-sourcecharge Qgs - 8.5 - nC Gate-draincharge Qgd - 20 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=12.0A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 12.0 A Pulseddrain-sourcecurrent ISM - - 48.0 A Reverserecoverytime trr ISD=12.0A dlSD/dt=100A/μs (note4) - 430 - ns Reverserecoverycharge Qrr - 5.0 - μC Note:1.repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=11mH,IAS=12.0A,VDD=50V,RG=25Ω,staringT J=25ºC 3.ISD<12.0A,di/dt<200A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of7 Rev1.1JAN2014

12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of7 Rev1.1JAN2014

12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.1JAN2014

12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.1JAN2014

12A，600V N-CHANNELMOSFETKIA SEMICONDUCTORS 12N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.1JAN2014