12N60

12N60 DYELEC

Document overview

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Technical content

1 / 9May.2015-REV.00 1. Ga te 2. Drain 3. Source Pin Definition: PROD UCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 0.80 @ VGS =10V 12 600V N-Channel Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) RDS(ON)<0.80Ω @ VGS=10V Fast switching capability Low gate charge Lead free in compliance with EU RoHS directive. Green molding compound Block Diagram

Ordering Information

• Case: TO-220,ITO-220,TO-262,TO-263 Package D G S PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous Dr ain Current ID 12 A Pulsed Drai n Current (Note 2) IDM 48 A Avalanche En ergy Single Pulsed (Note 3) E AS 790 mJ Power Dissipation TO-220/TO-262/TO-263 PD 225 W ITO-220 51 W Junction T emperature TJ +150 °C Operating Te mperature TOPR -55 ~ + 150 °C Storage Temperature TSTG -55 ~ + 150 °C Notes: 1. Absolu te maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 30mH, IAS = 7.1A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C Part No. Package Packing DMT10N60-TU TO-220 50pcs / Tube DMF10N60-TU ITO-220 50pcs / Tube www.dyelec.com DMK10N60-TU TO-262 50pcs / Tube DMG10N60-TU TO-263 50pcs / Tube DMG10N60-TR TO-263 800pcs / 13" Reel

600V N-Channel Power MOSFET ELECTRICAL CH ARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Junction to Ambient TO-220/ITO-220 TO-262/TO-263 θJA 62.5 °C/W Junction to Case TO-220/TO-262/TO-263 θJC 0.56 °C/W ITO-220 2.6 PARAMETER SYMBOL T EST CONDITIONS TYP MIN MAX UNIT OFF CHAR ACTERISTICS Drain-Source Breakd own Voltage BVDSS GSV =0V, ID=250μA 600 V Drain-Source L eakage Current IDSS Gate- Source L eakage Current Forward IGSS VG=30V, VDS=0V 100 nA Reverse VGS=-30V, VDS=0V -100 nA ON CHAR ACTERISTICS Gate Th reshold Voltage VGS(TH) DSV =VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) 0.60 0.80 Ω DYNAM IC CHARACTERISTICS Input Capa citance CISS VDS=25V, VGS =0V, f=1.0 MHz 1480 pF Output Capacitance COSS pF200 Reverse Tr ansfer Capacitance CRSS 25 pF SWITCHING CHA RACTERISTICS Turn-On Delay Time tD(ON) 30 ns Turn-On Rise Time tR ns115 Turn-Off Delay Time tD(OFF) 95 ns Turn-Off Fall Time tF 85 ns Total Gate Charge QG 42 nC Gate-Source Charg e QGS nC8.6 Gate-Drain Charge QGD 21 nC DRAI N-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diod e Forward Voltage VSD 1.4 V Maximum Continuo us Drain-Source Diode Forward Current IS 12 A Maximum Pulsed Drain-Source Diode Forward Current ISM 48 A Reverse Recovery Time trr VGS=0V, IS=12A, dIF/dt =100 A/μs (Note 1) 570 ns Reverse Recovery Charge QRR μC5.5 Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. May.2015-REV.00 VDD =300V, ID =12A, RG =25Ω (Note 1, 2) VDS=480V, ID=12A, VGS=10V (Note 1, 2) VDS=600V, VGS=0V 1 µA 9*S=10V, ID=6A GSV = 0 V, IS = 12A www.dyelec.com

TEST CIRCUITS AND WAVEFORMS 600V N-Channel Power MOSFET Same Type as D.U.T. L VDDDri ver VGS RG VDS D.U.T. + dv/dt controlled by RG * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Dio de Recovery dv/dt Test Circuit PeriodD=VGS Driver) ISD .U.T.) IFM, Body Diode Forward Current di/dt IRM Bod y Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD V VDS (D.U.T. VGS= P.W. Period Peak Dio de Recovery dv/dt Waveforms May.2015-REV.00 12N60 www.dyelec.com

T EST CIRCUITS AND WAVEFORMS(Cont.) 600V N-Channel Power MOSFET Jan.2015-REV.00 www.sddydz.com May.2015-REV.00 12N60 VDS 10% VGS tD( ON) tR tD( OFF) tF S witching Test Circuit Switching Waveforms V Charge QGS QGD QG VGS Gate Ch arge Test Circuit Gate Charge Waveform VDD tp Time BVDSS IAS ID( t) VDS(t Unc lamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms www.dyelec.com

600V N-Channel Power MOSFET May.2015-REV.00 12N60 -55°C 101 100 10-1 68 1 0 Gate-Source Voltage, VGS (V) T ransfer Characteristics No tes: 250µs Pulse Test TC=2 5°C Top: VGS 15V 10V 8.0V 7.0V 6.5V 6.0V Bo ttom: 5.5V 101 100 10-1 100 101 D rain-Source Voltage, VGS (V) On -Resign Characteristics 0°C No tes: 1.VDS= 50V 2.250µs Pulse Test www.dyelec.com

600V N-Channel Power MOSFET 10N60 6 / 9 May.2015-REV.00 Dra in Current, ID (A) Thermal Response, ZθJC(t) www.dyelec.com

600V N-Channel Power MOSFET May.2015-REV.00 12N60 TO-2

20 Mechanical Drawing TO-2

20 Mechanical Drawing

-220 Mechanical Drawing www.dyelec.com

600V N-Channel Power MOSFET 8 / 9 May,2015-REV.00 www.dyelec.com TO-262 Mechanical Drawing TO-263 Mechanical Drawing

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