12N60

12N60 NELLSEMI

Document overview

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Technical content

12A, 600Volts They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 12N60 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 25pF typical)RSS R = 0.8Ω @ V = 10V DS(ON) GS Ultra low gate charge(54nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 12 V (V)DSS 600 0.8 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G D (Drain) G (Gate) S (Source) TO-220AB (12N60A) D GDS UNIT V /ns V A mJ ºC -55 to 150 VALUE 7.4 600 ±30 600 225 4.5 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1. . Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 12 T =25°C C 2.I =12A, V =50V, L= 10mH, R =25Ω, starting T = 25 °C.AS DD GS J 24Repetitive avalanche energy(Note 1)EAR 3.I ≤ 12A, di/dt ≤ 200A/µs, V ≤ V , starting T 5°C.SD DD (BR)DSS J = 2 W TO-220F ( )12N60AF G SD 790Single pulse avalanche energy (Note 2)EAS l =12A, L = 10mHAS l =12A,R =50Ω, V =10V AR GS GS TO-220AB TO-220F www.nellsemi.com Page 1 of 7

UNITMin. 0.56 2.4 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to case SYMBOL Rth(j-c) Typ. Max. ºC/W 62.5 Thermal resistance, junction to ambientRth(j-a) UNIT V ns μA pF nC Max. 100 600 0.6 -100 100 0.7 1480 115 200 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 250µA, D V = 0VGS TEST CONDITIONS I = 250 A, D µ V =VDS GS V =600V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 8.6Gate to source charge Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) V/ºC Ω nA T =125°C C Typ.Min. 0.8 V = 300V, DD (Note1,2) V = 10VGS I = 12A, R = 25Ω D GS V = 25V, V = 0V, f =1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS Static drain to source on-state resistanceRDS(ON) V = 10V, l = 6A GS D Gate to drain charge (Miller charge)QGD 21 V =480V, V =0V DS GS

2 V4V =V , I =250μA GS DS DGate threshold voltageVGS(TH)

62.5 ºC/W OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS 1900 270 RG Gate resistance V = 0V, V = 0V, f =1MHzDS GS 0.2 1.2 Ω SWITCHING CHARACTERISTICS 180 240 200 www.nellsemi.com Page 2 of 7 V = 480V, DD (Note1,2) V = 10VGS I = 12A, D

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C UNITMax.TEST CONDITIONSPARAMETERSYMBOL Typ.Min. VI = 12A, V = 0VSD GS Diode forward voltageVSD 1.4 Integral reverse P-N junction diode in the MOSFET Continuous source to drain currentI S(I )SD 12 D (Drain) G (Gate) S (Source) A Pulsed source currentISM I = 12A, V = 0V, SD GS dI /dt = 100A/µs F Reverse recovery timetrr ns380 μCReverse recovery chargeQrr 3.5 Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 12 = 12A 60 = 600V

12 N 60 A

A = TO-220AB AF = TO-220F N = N-Channel ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T) www.nellsemi.com Page 3 of 7

■ TEST CIRCUITS AND WAVEFORMS(Cont.) Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms Same Type as D.U.T. VDS D.U.T. 3mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VGS Charge L VDS RG 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t) www.nellsemi.com Page 4 of 7

Fig.4 Body diode forward voltage variation vs Source current and Temperature Source-Drain voltage, V (V)SD Capacitance (pF) Drain-Source Voltage, V (V)DS Fig.3 On-Resistance variation vs. Drain current and Gate voltage Drain-Source On-Resistance, R (Ω)DS(ON) Drain current, l (A)D Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics Gate-Source voltage, V (V)GS Total gate charge ,Q (nC)G Reverse drain current, l (A)DR I2N60 Series Fig.2 Transfer characteristics Gate-Source voltage, V (V)GS Drain Current,l (A)D Drain Source voltage, V (V)DS 1-10 110 010 4 62 8 Drain-Current, l (A)D 150°C 25°C -55°C Notes: 1. V =50VDS 2. 250µs pulse width V = 10VGS V = 20VGS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 5 10 15 20 25 30 35 150°C 25°C 1-10 110 010 Notes: 1. V =0VGS 2. 250µs pulse Test 3000 2400 1800 1200 600 C = ( )iss C +C C = shorted gs gd ds C = C +Coss ds gs C = Crss gd Ciss Coss Crss Notes: 1. V =0VGS 2. f=1MHz -110 010 110 0 5 10 15 20 25 30 35 40 45 Fig.1 On-State characteristics 1-10 110 010 Top: VGS 15V 10V 6.5V Bottom: 5.5V Notes: 250µs pulse test T = 25°CC 1-10 110010 V =120VDS V =300VDS V =480VDS Notes: 1. =1l 2AD Notes: 1. V =0VGS 2. 250µs pulse Test www.nellsemi.com Page 5 of 7 ■ TYPICAL CHARACTERISTICS

Fig.7 Maximum safe operating area Drain current, l (A)D Drain-to-Source voltage, V (V)DS 10-2 010 -110 Rectangular Pulse Duration, t (sec)1 D = 0.5 0.02 0.1 0.05 0.01 0.2 (Single Pulse) Thermal response, Rth(j-c) Fig.8 Transient thermal response curve Thermal response, R (t)th(j-c) Notes: 1.R (t)=0.56W Max.th(j-c) 2.Duty factor, D=t /t1 2 3.T -T =P ×R (t)JM C DM th(j-c) PDM t T 100 10-2 -110 10-310-5 -410 -210 -110 -010 110 www.nellsemi.com Page 6 of 7 110 210 010 110 210 310 100µs 1ms DC Operation in This Area is Limited by RDS(ON) Note: 1. T 2. T = 25°CC = 150°CJ 3. Single Pulse 10ms 100ms

www.nellsemi.com Page 7 of 7 I2N60 Series TO-220F 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) PIN 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 16.13 (0.635) 15.87 (0.625) 2.87 2.62 (0.103) 3.91 (0.154) 3.74 (0.148) (0.113) 29.16 (1.148) 28.40 (1.118) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 15.32 (0.603) 14.55 (0.573) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 2.79 (0.110) 2.54 (0.100) TO-220AB All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source) D (Drain) G (Gate) S (Source)