12FT10A-S

12PT06AI-S NELLSEMI

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Page□1□of□7 SEMICONDUCTOR 12PT□Series RoHSRoHS Sensitive and Standard SCRs, 12A SYMBOL IT RMS( )RMS on state current full sine wave- ITSMNon repetitive surge peak on state- current full cycle T initial = 25 C)( , j ° A I t2I t Value for fusing2 98 A s2 dI dt/Critical rate of rise of on state current- 50 IGMPeak gate current PG AV( )Average gate power dissipation TstgStorage temperature range Operating junction temperature range - 40 + 150to - 40 + 125to ºC A µs/ A A W UNITV ALUE 140 145 F□=50□Hz F□=60□Hz t□=□20□ms t□=□16.7□ms t =□10□msp F□=□60□Hz T =125ºCj T =□125ºCj T =□125ºCj T =□20□µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST□CONDITIONS Main Features Symbol Value Unit IT(RMS) V /VDRM RRM IGT 12 A V mA0.2 15to 600□to□1000

DESCRIPTION

(180°□conduction□angle□) Average□on-state□current (180°□conduction□angle) IT AV( ) 8 A 1 2 3 1 2 3 TO-220AB (Non-lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) I = 2xl , t nsG GT r ≤100 1 2 3 TO-220AB (lnsulated) (12PTxxF) (12PTxxG) (12PTxxA) (12PTxxAI) (G)3 1(A1) (A2) www.nellsemi.com T =105°Cc T =90°Cc TO-251/TO-252/TO-220AB/TO-263 TO-220AB□insulated TO-251/TO-252/TO-220AB/TO-263 TO-220AB□insulated T =105°Cc T =90°Cc Available either in sensitive or standard gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive ignition and voltage regulation circuits. Available in through-hole or surface-mount they□provide□an□optimized□performance discharge packages, in□a□limited□space. G TO-263 (D PAK)2 (12PTxxH)

Page□2□of□7 SEMICONDUCTOR 12PT□Series RoHSRoHS 12PTxxxx Unit IGT VGD IH mA dV dt/ VTM IDRM IRRM mA IL V =□12□V,□R =□33ΩD L V =□V ,□R =□3.3KD DRM L Ω I =□500□mA,□gate□openT I =□1.2□IG GT V =□67%□V , gate□openD DRM 0.2 200 0.85 mA V V mA V/µs I =□24A,TM t =□380□µsP T =□125°C j T =□25°Cj T =□125°Cj V µA STANDARD ELECTRICAL SPECIFICATIONS (TJ = 25 ) unless otherwise specifiedºC, TEST□CONDITIONSSYMBOL V =□VDRM RRM 1.6 Min. Max. Max. Min. Max. Min. Max. Max. Max. THERMAL RESISTANCE Rth j c( - ) Junction to case DC( ) Rth j a( - ) Junction to ambient (DC) 1.3 °C/W °C/W UNITV ALUESYMBOL Parameter IPAK/DPAK/TO-220AB/TO-263 D-PAK I-PAK TO-220AB,□TO-220AB□insulated 4.6 S□=□0.5□cm 2 VGT www.nellsemi.com 0.5 T 1.3 T =□125°Cj Max. 30 30 60 Vto Threshold□voltage V Rd T =□125°Cj Max. 30 mΩ mA T =□25°Cj T =□125°Cj Dynamic□resistance 12PTxxxx-S Unit IGT VGD mA dV dt/ VTM IDRM IRRM mA IH V =□12□V,□R =□140ΩD L V =□V ,□R =□3.3KD DRM L Ω, =220R ΩGK I =□10 ARG µ I =□50□mA R =□1□KΩT , GK V =□67%□V , R =□220ΩD DRM GK 0.1 0.85 µA V V V/µs I =□24A,TM t =□380□µsP T =□125°C j T =□25°Cj T =□125°Cj V µA SENSITIVE ELECTRICAL CHARACTERISTICS (Tj = 25 ) unless otherwise specifiedºC, TEST□CONDITIONSSYMBOL V =□V R =□220DRM RRM, GK Ω 1.6 Max. Max. Min. Max. Min. Max. Max. Max. VGT 0.8 200 T =□125°Cj Vto Threshold□voltage V Rd T =□125°Cj Max. 30 mΩ V T =□25°Cj T =□125°Cj Dynamic□resistance VRG Min. IL I =□1□mA R =□1□KΩG , GK Max. mA TO-220AB□insulated S=Copper□surface□under□tab D²PAKS□=□1□cm2 100

Page□3□of□7 SEMICONDUCTOR RoHSRoHS 12PT□Series ORDERING INFORMATION SCHEME SCR series Package□type Current V oltage□Code IGT Sensitivity A TO-220AB□(non-insulated)= AI TO-220AB□(□insulated)= 12□=□12A,□IT(RMS) T□=□0.5~5□mA

12 PT 06 - S

06□=□600V F□=□TO-251□(I-PAK) G□=□TO-252□(D-PAK) 08□=□800V www.nellsemi.com

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE TO-220AB 2.0g 50 Tube 12PTxxAI-y 12PTxxAI-y 2.3g 50 Tube 12PTxxF-y 12PTxxF-y TO-251(I-PAK) 0.40g 80 12PTxxG-y 12PTxxG-y 0.38g 80 TubeTO-252(D-PAK) TO-220AB□(insulated) Tube Blank□=□2~15□mA Note: xx voltage y sensitivity= , = 10□=□1000V PRODUCT SELECTOR PART NUMBER VOL T AGE xx( ) SENSITIVITY 600 V A200 µ 1000 V 12PTxxA-S/12PTxxAl-S 12PTxxF-S 12PTxxG-S V VV V 800 V V V PACKAGE TO-220AB D-PAK VV V VV V V V V 12PTxxA-T/12PTxxAl-T VV V V V V V V V V V V 12PTxxA/12PTxxAl 12PTxxF-T 12PTxxF 12PTxxG-T 12PTxxG D-PAK D-PAK I-PAK I-PAK I-PAK TO-220AB TO-220AB A0.5~5 m A2~15 m A200 µ mA0.5~5 A2~15 m A200 µ A0.5~5 m A2~15 m S□=□70~200□µA 12PTxxH-S A20 µ D²-PAK D²-PAK D²-PAK A0.5~5 m A2~15 m V V V V V V V V V 12PTxxH-T 12PTxxH H□=□TO-263□(D²PAK) 12PTxxH-y 12PTxxH-y 50 Tube2.0gTO-263(D²-PAK)

Page□4□of□7 0.0 0.2 0.4 0.6 0.8 1.6 12PT□Series 0.01 0.10 1.00 Fig.5 Relative variation of thermal impedance Junction□to□ambient□versus□pulse□duration Fig.6 Relative variation of gate trigger and holding□current□versus□junction temperature□for□I =200 AGT µ -40 www.nellsemi.com Fig.3 Average and DC on-state current versus ambient temperature (DPAK) Fig. Relative variation of thermal impedance4 junction to case versus pulse duration 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 1E+0 0.1 0.2 0.5 1.0 I (AV)(A)T Fig. Maximum average power dissipation versus1 -average on state current Fig.2 Average and DC on-state current versus case temperature P W( ) 0 1 2 4 5 6 0 25 50 75 100 125 I (A)T(AV) 1E+11E-2 1E-1 1E+0 1E+2 5E+2 1.0 1.2 1.4 1.8 2.0 -20 0 20 40 60 80 100 120 140 1E+11E+21E+3 I ,I ,I [Tj]□/□I ,I ,I [Tj=25 C]GT H L GT H L ° K=[Zth(j-c)/Rth(j-c)] K=[Zth(j-a)/Rth(j-a)] α=180° 360° αI (A)T(AV) 3 7 8 9 Tcase (°C) DC α=180° Insulated TO-220AB TO-251/TO-252 TO-263/TO-220AB Device□mounted□on□F R4□with Recommended□pad□layout Tamb (°C) α=180° DPAK DC D²PAK 3.0 tp(s) tp(s) D²PAK TO-220AB/IPAK Device□mounted□on□F R4□with Recommended□pad□layout DPAK IGT l &□IH L R =1K ΩGK Tj(°C) (DANK)

Page□5□of□7 12PT□Series I (A)STM Fig.11 Surge peak on-state current versus number□of□cycles Fig.12 Non-repetitive surge peak on-state current and□corresponding□values□of□l²t□versus www.nellsemi.com 0.1 0 200 400 1.0 Fig.9 Relative variation of dV/dt immunity versus□gate-cathode□resistance 0.0 0.5 1.0 1.5 0.0 0.2 4.0 5.0 -20 0 6020-40 40 3.5 4.5 100 14080 120 0.4 dV/dt[R ]□/□dV/dt[R =220Ω]GK GK Fig.7 Relative variation of gate trigger and holding□current□versus□junction temperature Fig.8 Relative variation of holding current versus□gate-cathode□resistance (typical□values) dV/dt[C ]□/□dV/dt[R =220Ω]GK GK 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1E-2 1E-1 1E+0 1E+1 600 800 1000 1200 10.0 25 7550 125 150100 2.0 2.5 3.0 0.0110 1 100 1000 100 0.10 1.00 10.00 100 1000 I [R ]□/□I [R =1KΩ]H GK H GKI ,I ,I [Tj]□/□I ,I ,I [Tj=25 C]GT H L GT H L ° 3.0 2.5 2.0 1.5 1.0 0.5 0.0 (Typical□values) Fig.1 Relative variation of dV/dt immunity0 versus□gate-cathode□capacitance (typical□values)□for□I =200µA GT I (A),I²t(A²s)TSM 5mA□&□15mA□Series IGT l &□IH L Tj(°C) R (KΩ)GK T =125 Cj ° V =0.67□X□VD DRM R (KΩ)GK C (nF)GK V =0.67□X□VD DRM T =125 Cj ° R =220ΩGK 3.5 4.0 t =10msp One□cycle Non□repetitive T initial=25 Cj ° Number□of□cycles 110 120 130 140 150 Repetitive Tc=105 C° I²t ITSM Tj□inital=25 C° tp(ms) dI/dt□Iimitation 2000 200µA□Series T =25 Cj ° sinusoidal□pulse□width

Page□6□of□7 12PT□Series www.nellsemi.com Fig.13 On-state characteristics (maximum values) Fig.14 Thermal resistance junction to ambient versus□copper□surface□under□tab□(D²PAK) 100 200 0 2 4 6 8 10 12 14 16 18 20 100 I (A)TM R (j-a)( C/W)th ° Case□Style 6.4(0.52) 6.6(0.26) 5.2(0.204) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) TO-251 (I-PAK) 2.87 (0.113) 2.62□(0.103) 9.40□(0.370) 9.14□(0.360) 10.54□(0.415) .MAX 16.13□(0.635) 15.87 (0.625)PIN 4.06□(0.160) 3.56□(0.140) 1.45□(0.057) 1.14□(0.045) 2.67□(0.105) 2.41□(0.095) 2.65□(0.104) 4.95□(0.195) 0.90□(0.035) 0.70□(0.028) 3.91□(0.154) 3.74□(0.148) 1 3 2 4.70□(0.185) 4.44 0.1754( ) 1.39□(0.055) 1.14 (0.045) 3.68□(0.145) 3.43□(0.135) 8.89□(0.350) 8.38□(0.330) 29.16□(1.148) 28.40 (1.118) 14.22□(0.560) 13.46□(0.530) 0.56□(0.022) 0.36□(0.014) 2.79□(0.110) 2.54□(0.100) 15.32□(0.603) 14.55□(0.573) TO-220AB (G)3 1(A1) (A2) V (V)TM Tj=25 C° Tj=max Tjmax V =0.85Vt0 Rd=30mΩ 4.5 5.0 S(cm²) Epoxy□printed□circuit□board□FR4 copper□thickness□=□35µm DPAK D²PAK

12PT□Series RoHS 1 2 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) TO-252 (D-PAK) Case□Style Page□7□of□□7 (G)3 1(A1) (A2) www.nellsemi.com TO-263(D PAK)2 2.79□(0.110) 0.36□(0.014) 2.79□(0.110) 2.29□(0.090) 1.40□(0.055) 1.19□(0.047) 0 0.254□(0 0.01)to to 1.40□(0.055) 1.14□(0.045) 4.83□(0.190) 4.06□(0.160) 10.45□(0.411) 9.65□(0.380) 6.22□(0.245) 9.14□(0.360) 8.13□(0.320) 15.00□(0.591) 0.940□(0.037) 0.686□(0.027) 2.67□(0.105) 2.41□(0.095) 5.20□(0.205) 4.95□(0.195) 15.85□(0.624) 3.56□(0.140) 0.53□(0.021)