12DR12M

12DR12M NELLSEMI

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High surge current capability Stud cathode and stud anode version Wide current range TYPICAL□APPLICATIONS SEMICONDUCTOR RoHSRoHS Page□1□of□5 Glass Passivated Standard Recovery Diodes N High Power Productsell Voltage up to 1600V VRRM RoHS compliant 12D(R)Series (Stud Version), 12A DO-203AA(DO-4) Battery charges Converters Power supplies Machine tool controls PRODUCT SUMMARY IF(AV) 12A MAJOR RATINGS AND CHARACTERISTICS PARAMETER UNIT VVRRM IFSM IF(AV) I t2 TJ A s2 A A ºC TEST CONDITIONS VALUES I F(RMS) TC ºC A 140 265 280 351 325 200□to□1600 -65□to□175 50□HZ 60□HZ 50□HZ 60□HZ Range ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGETYPE NUMBER CODE V ,MAXIMUMRRM REPETITIVE PEAK REVERSE VOLTAGE V V ,MAXIMUMRSM NON-REPETITIVE PEAK VOLTAGE V V ,MIMIMUMR(BR) AVALANCHE VOLTAGE V(1) V ,MAXIMUMRRM AT TJ=175 C° mA 12D(□R□) 200 400 600 800 1000 1200 1600 275 500 725 950 1200 1400 1800 500 750 950 1150 1350 (1) Avalanche version only available from V 400V to 1600VRRM Note 1750 Glass passivated chips

Page□2□of□5 N High Power Productsell FORWARD CONDUCTION PARAMETER SYMBOL UNIT THERMAL AND MECHANICAL SPECIFCATIONS 12D(R)Series TEST CONDITIONS VALUES Maximum□average□forward□current at□case□temperature IF(AV) 180 conduction,□half□sine□wave° IF(RMS)Maximum□RMS□forward□current 12 A 140 ºC K/WMaximum□on-repetitive□peak reverse□power 10μs□square□pulse,□T =□T maximumJ J Maximum□peak,□one-cycle□forward, non-reptitive□surge□current IFSM t ms= 10 t ms= 8.3 t ms= 10 t ms= 8.3 t ms=□10 t ms= 8.3 t ms=□10 t ms=□8.3 No□voltage reapplied 100%V RRM reapplied No□voltage reapplied 100%V RRM reapplied I t2 Sinusoidal□half□wave, initial□T =□T maximumJ J 265 280 225 235 351 325 249 230 A s2 A A 3511t□=□0.1□to□10□ms,□no□voltage□reappliedI t2√ Maximum□l²t□for□fusing Maximum□l² t□for□fusing√ Maximum□forward□voltage□drop VFM 1.25 A s2√ Vl =□38□A,□T =□25˚C,□t =□400µs□rectangular□wavepk J p (1) Avalanche only for avalanche version, all other parameters the same as 12D Note PARAMETER SYMBOL UNITSTEST CONDITIONS VALUES Maximum□junction□operating temperature□range Maximum□storage□temperature□range -□65□to175 -□65□to□200 ºC 0.5 K/W Maximum□thermal□resistace, junction□to□case Maximum□thermal□resistance case□to□heatsink (13) (10) 0.21 (lbf□□□in)· N□□□m· Allowable□mounting□torque Approximate□weight Case□style DO-203AA□(DO-4) TJ Tstg RthJC RthCS (lbf□□□in)· N□□□m· g oz. Not□lubricated□threads Lubricated□threads Mounting□surface,□smooth,□flat□and□greased DC□operation See□dimensions□-□link□at□the□end□of□datasheet PR (1) 1.5 +0 -10% 1.2 -10% Δ R CONDUCTIONthJC CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR□CONDUCTION UNITSTEST□CONDUCTIONS K/W 180˚ 120˚ 90˚ 60˚ 30˚ 0.33 0.41 0.53 0.78 1.28 0.26 0.44 0.58 0.81 1.29 T =□T maximumJ J

• The table above shows the increment of thermal resistance R when devicesthJC Note operate at different conduction angles than DC

12D(R)Series Maximum Allowable□Case Temperature(˚C) Maximum Average□Forward□Power□Loss□(W) Average□Forward□Current□(A) Average□Forward□Current□(A) Average□Forward□Current□(A) Maximum Allowable Ambient Temperature□(°C) Fig.□3□□Forward□Power□Loss□Characteristics Fig.1□Current□Ratings□Characteristics Fig.2□Current□Ratings□Characteristics 30° 60° 90° 120 ° 180 ° DCMaximum Allowable□Case Temperature(˚C) 60° 30° 90° 120 ° 180 ° DC Maximum Average□Forward□Power□Loss□(W) Fig.□4□□Forward□Power□Loss□Characteristics Average□Forward□Current□(A) Maximum Allowable Ambient Temperature□(°C) 30° 60° 90° 120 ° 180 ° 0 4 8 1210 14 140 160 150 180 170 Conduction Period 0 4 8 12 16 20 130 140 160 150 180 170 30° 60° 90° 120 ° 180 ° RMS□Limit Conduction□Angle Tj °C= 175 R = 8K/W-Delta RthSA 6K/W 12K/W 10K/W 15K/W 20K/W 30K/W 0 4 8 12 14 25 50 75 100 Conduction Period Tj °C= 175 RMS□Limit RthSA = 6K/W-Delta R 8K/W 12K/W 10K/W 15K/W 20K/W 30K/W 40 258 201612 7550 100 12D(R)Series 12D(R)Series 12D(R)Series Page□3□of□5 Conduction□Angle 12D(R)Series R (DC)=2.0K/WthJC 2 6 R (DC)=2.0K/WthJC 2 6 10

12D(R)Series Steady□State□Value RthJC□=□2.0K/W (DC□Operation) Peak□Half□Sine□Wave□Forward□Current□(A) Instantaneous□Forward□Current□(A) Peak□Half□Sine□Wave□Forward□Current□(A) Transient Thermal□Impedance□Z (K/W) thJC Fig.□5□□Maximum□Non-Repetitive□Surge□Current Fig.□6□□Forward□Voltage□Drop□Characterisics Fig.7□Maximum□Non-Repetitive□Surge□Current Fig.8□Thermal□Impedan ce□Z CharacteristicsthJC 1 10 100 10 10.10.01 Number□Of□Equal□Amplitude□Half□Cycle□current□Pulses(N) Instantaneous□Forward□Voltage□(V) Pulse Train□Duration□(S) Square□Wave□Pulse□Duration□(s) ORDERING INFORMATION TABLE 1 - Current□rating:□Code□=□IF(AV) 2 - D□=□Standard□recovery□device 3 - None□=□Stud□normal□polarity (cathode to□stud) R□=□Stud□reverse□polarity□(anode□to□stud) Device□code D M12 R 12 1 2 3 4 5 - × Voltage□code 100□=□V (see Voltage□Ratings table)RRM - None□=□Stud□base DO-203AA (DO-4)□#10-32□UNF-2A × M□=□Stud□base DO-230AA (DO-4)□M5 0.8□(not□available for□avalanche□diodes) At Any□Rated□Load□Condition And□With Rated□V Applied□Following□Surge.RRM Initial TJ□=□175°C @60□Hz□0.0083□s @50□Hz□0.0100□s 125 100 150 175 225 200 250 TJ□=□175°C TJ□=□25°C 2 3 4 5 6 100 1000 125 100 150 175 200 225 250 275 0.001 100.1 10.01 0.1 Page□4□of□5 12D(R)Series 12D(R)Series 12D(R)Series Maximum□Non□Repetitive□Surge□Current Versus□Pulse Train□Duration Initial TJ□=□175°C No□Voltage□Reapplied Rated□V ReappliedRRM 12D(R)Series

12D(R)Series (0.45/0.48) 11.6/12.4 (0.02/0.04) 0.5/1.0 Ø8.5/Ø8.9 (Ø0.33/Ø0.35) Ø1.5/Ø1.7 Ø0.05/Ø0.06 5.0/5.6 (0.19/0.22) 10/32 ” UNF-2A For□metric□devices:□M5 0.8× 9.6/10.1 (0.37/0.39) 3.7/4.3 (0.14/0.16) Page□5□of□5