110PT14

110PT_17 NELLSEMI

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Page 1 of 8www.nellsemi.com MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS kA2√s UNITSVALUE µS (Stud version, 110A) TO-209AC (TO-94)

FEATURES

High current and high surge capability Hermetic ceramic housing Planar SCR chips Compliant to RoHS Designed and qualified for multiple level DC motor control and drives Battery chargers AC controllers Controlled DC power supplies IT(AV) IT(AV) 110A IT(RMS) I /lTSM FSM 90°C 90°C 50 Hz 60 Hz 2l t 50 Hz 60 Hz 2I √t V /VDRM RRM Range 110 173 2250 2360 25.3 23.1 253 400 to 1600 A A 2kA s V tq typical 110 °CTJ Range -40 to 150 ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 150 °C mA 400 800 1200 1400 1600 1800 500 900 1300 1500 1700 1900 20110PT..S

Page 2 of 8www.nellsemi.com 110PT Series FORWARD CONDUCTION PARAMETER SYMBOL UNITTEST CONDITIONS VALUES Maximum average on-state current at case temperature IT(AV) 180 ° conduction, half sine wave, 50Hz A 90 ºC Maximum peak, one-cycle, on-state non-reptitive surge current ITSM t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms 173 2250 2360 1890 1980 25.3 23.1 17.9 2kA s A 16.3 t = 0.1 to 10 ms, no voltage reapplied Maximum l t for fusing2 253 V 110 VT(TO)2 2I √t 2kA √sMaximum l √t for fusing2 No voltage reapplied 100%V RRM reapplied No voltage reapplied 100%V RRM reapplied Sine half wave, initial T = T maximum J J IT(RMS) High level value of threshold voltage Maximum RMS currenton-state 180 ° conduction, half sine wave, 50Hz, T =90°CC (16.7% x π x I ) < I < π x I , T = T maximumT(AV) T(AV) J J I > π x I ,T(AV) T = T maximumJ J 0.80 1.05 1.6 2I t SWITCHING PARAMETER SYMBOL UNITSTEST CONDITIONS tq Voltage code 110Typical turn-off time VT(TO)1Low level value of threshold voltage VTMMaximum on-state voltage drop ITM = 350A, T = 25 °C, 180 °C conductionJ Maximum holding current Low level value of on-state slope resistance Maximum latching current High level value of on-state slope resistance lH lL rt1 rt2 (16.7% x π x I ) < I < π x I , T = T maximumT(AV) T(AV) J J I > π x I ,T(AV) T = T maximumJ J Anode supply = 6V , resistive load T = 25 °CJ 150 Anode supply = 6V , resistive load T = 25 °CJ 400 mA 2.10 1.75 mΩ BLOCKING V/μs mA UNITS T = T maximum,J J exponential to 67 % rated V DRM T = 150 °CJ lRRM PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum peak reverse and off-state leakage current Maximum critical rate of rise of off-state voltage lDRM 20 dV/dt 1000 Typical delay time td Gate current 1A, dl /dt = 1A/ μsg V = 67% V T = 25°Cd DRM, J l = 50A, T = T maximum, dl/dt = -5 A/ μs TM J J V = 50V, dV/dt = 20 V/ μs, gate 0V, 25 Ω R μs V

0.25 THERMAL AND MECHANICAL SPECIFICATIONS TRIGGERING T = T maximum, 66.7% V appliedJ J DRM Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM PGM PG(AV) lGM Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger Maximum rate of rise of turmed-on current tp ≤ 5ms, T = T maximum J J f = 50Hz, T = T maximum J J UNITSPARAMETER SYMBOL TEST CONDITIONS VALUES TYP. Max. tp ≤ 5ms, T = T maximum J J T = -40 °CJ T = 25 °CJ T = 150 °CJ T = -40 °CJ T = 25 °CJ T = 150 °CJ VGT lGT Anode supply = 12V, resistive load; R = 30 ΩL VGD lGD dl/dt T = 25 °C, l = 1.5A, t ≤ 0.5 µs J GM r 1.60 1.0 0.7 140 30 - 120 1.5 150 W A V mA V mA A/µs Maximum junction operating temperature range Maximum junction operating temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque, ±10% Approximate weight Case style See dimensions ( at the end of datasheet ) Non-lubricated threads Lubricated threads DC operation Mounting surface, smooth, flat and greased TJ Tstg RthJC RthCS -40 to 150 -40 to 150 0.25 0.1 15.5 (137) (120) 115 4.06 TO-209AC (TO-94) °C/W .N m .(lbf in) g oz. UNITSPARAMETER SYMBOL TEST CONDITIONS VALUES SEMICONDUCTOR RoHS RoHS Nell High Power Products 110PT Series Page 3 of 8www.nellsemi.com

Page 4 of 8www.nellsemi.com ORDERING INFORMATION TABLE 1 - Device code 110 SPT 16 M 3 4 5 Maximum average on-state current, I T(AV) For phase control thyristors Voltage code, V /V = code x 100DRM RRM Stud version None for standard device, ½” - 20UNF ″M for metric device, M12 x 1.5 ″S″ for short flexible lead Fig.1 Current ratings characteristics Average on-state current (A) Fig.2 Current ratings characteristics Maximum allowable case temperature (°C) Maximum allowable case temperature (°C) 150 140 130 120 110 100 0 20 40 60 80 100 120 150 140 130 120 110 100 0 20 40 60 80 100 120 140 160 180 Ø Ø R (DC) = 0.25 K/WthJC R (DC) = 0.25 K/WthJC Conduction angle Conduction period 180 °C 120 °C90°C60°C30°C Average on-state current (A) 30°C 60°C 90°C 120 °C 180 °C DC ∆RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITSTEST CONDUCTIONS K/W 180° 120° 90° 60° 30° 0.043 0.052 0.066 0.096 0.167 0.031 0.053 0.101 0.169 T = T maximumJ J

• The table above shows the increment of thermal resistance R when devices thJC Note operate at different conduction angles than DC 0.071

Page 5 of 8www.nellsemi.com 110PT Series Fig.4 On-State power loss characteristics Average on-state current (A) Maximum average on-state power loss (W) 140 120 100 0 20 40 60 80 100 120 Maximum allowable ambient temperature (°C) Maximum average on-state power loss (W) 160 0 20 40 60 80 100 120 140 140 120 100 220 Ø 180 200 220 140 160 180 160 180 200 R = 0.3 K/W- thSA

0.6 K/W

0.8 K/W

1 K/W

1.5 K/W

2 K/W

4 K/W

5 K/W

Fig.5 Maximum non-repetitive surge current Number of equal amplitude half (A) Peak half sine wave On-state current (A) Average on-state current (A) Fig.6 Maximum non-repetitive surge current Conduction period 180°C 120°C 90°C 60°C 30°C DC T =150 ºCJ RMS limit Peak half sine wave On-state current (A) 2000 1800 1600 1400 1200 1000 800 1 10 100 0.01 0.1 1 10 500 1000 1500 2000 2500 At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Initial T = 150°CJ @60 Hz 0.0083 s @50 Hz 0.0100 s Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained Initial T = 150°CJ No Voltage Reapplied @ 50Hz Reted VRRM Reapplied @ 50Hz Fig.3 On-State power loss characteristics Average on-state current (A) Maximum average on-state power loss (W) 140 120 100 0 20 40 60 80 100 120 Maximum allowable ambient temperature (°C) Maximum average on-state power loss (W) Ø 160 0 20 40 60 80 100 120 140 140 120 100 160 180°C 120°C 90°C 60°C 30°C R = 0.3 K/W- ∆R thSA 0.8 K/W T =150 ºCJ Conduction angle

Page 6 of 8www.nellsemi.com Fig.8 Thermal lmpedance Z characteristic thJC Transient thermal lmpedance , Z (K/W)thJC 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Square wave pulse duration (s) Steady state value R = 0.25 K/WthJC (DC operation) Fig.9 Gate characteristics lnstantaneous gate voltage (V) 100 0.1 0.001 0.01 0.1 1 10 100 1000 a) Recommended load line for rated di/dt : 20V, 30 Ω t ≤ 0.5µs, r p t ≥ 6µs Rectangular gate pulse b) Recommended load line for ≤ 30% rated di/dt : 15V, 40 Ω t ≤ 1µs, r p t ≥ 6µs (1) P = 12W, t = 5msGM p (2) P = 30W, t = 2msGM p (3) P = 60W, t = 1msGM p (4) P = 200W, t = 300µsGM p (b) (a) (1) (2) (4) (3) Frequency limited by P G(AV) T =150 ºCJ T =25 ºCJ T =40 ºCJ lnstantaneous gate voltage (A) VGD Fig.7 On-state voltage drop characteristics lnstantaneous on-state voltage (A) lnstantaneous on-state current (A) 10000 1000 100 0 1 2 3 4 5 T =25 ºCJ T =150 ºCJ

Page 7 of 8www.nellsemi.com 160 (6.30) Min 200 (7.87) Min

Page 8 of 8www.nellsemi.com Ceramic housing (for short flexible lead) 100 (3.94) Min 130 (5.12) Min