10N80H KIA
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Technical content
10A，800V N-CHANNELMOSFETKIA SEMICONDUCTORS 10N80HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1. Description ThisPowerMOSFETisproducedusingKIAadvancedplanarstripeDMOStechnology.This advancedhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedon halfbridgetopology. 2.Features n RDS(on)=0.85Ω@V GS=10V n Lowgatecharge(typical63nC) n Highruggedness n Fastswitchingcapability n Avalancheenergyspecified n Improveddv/dtcapability n ESDimprovedcapability 3. Pinconfiguration 1of5 Rev1.1OCT2014 Pin Function
1 Gate
2 Drain
3 Source
10A，800V N-CHANNELMOSFETKIA SEMICONDUCTORS 10N80HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 800 V Gate-sourcevoltage VGSS +25 V Draincurrentcontinuous TC=25ºC ID 10 A TC=100ºC 6 A Draincurrentpulsed(note1) IDP 40 A Avalancheenergy Repetitive(note1) EAR 30.5 mJ Singlepulse(note2) EAS 350 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 305 W derateabove25 ºC 2.44 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC 5. Thermalcharacteristics Parameter Symbol Ratings Units Thermalresistance,junction-ambient RthJA 62.5 ºC/WThermalresistance,case-to-sinktyp. RthCS - Thermalresistance,Junction-case RthJC 0.4 2of5 Rev1.1OCT2014
10A，800V N-CHANNELMOSFETKIA SEMICONDUCTORS 10N80HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 800 - - V Zerogatevoltagedraincurrent IDSS VDS=800V,V GS=0V - - 1 μA VDS=640V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=25V,VDS=0V - - 10 uA Reverse VGS=-25V,VDS=0V - - -10 uA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.8 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=5A - 0.85 1.1 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2230 - pF Outputcapacitance Coss - 135 - pF Reversetransfercapacitance Crss - 74 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=400V,ID=10A, RG=25Ω(note4,5) - 25 - ns Risetime tr - 35 - ns Turn-offdelaytime td(off) - 225 - ns Falltime tf - 145 - ns Totalgatecharge Qg VDS=640V,ID=10A, VGS=10V(note4,5) - 63 - nC Gate-sourcecharge Qgs - 10 - nC Gate-draincharge Qgd - 25 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ID=10A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 9 A Pulseddrain-sourcecurrent ISM - - 36 A Reverserecoverytime trr ISD=10A dlSD/dt=100A/μs (note4) - 850 - ns Reverserecoverycharge Qrr - 10 - μC Note:1Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=6.3mH,I AS=10A,VDD=50V,RG=25Ω,staringT J=25ºC 3.I SD<9A,di/dt<200A/μs,V DD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1OCT2014
10A，800V N-CHANNELMOSFETKIA SEMICONDUCTORS 10N80HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1OCT2014
10A，800V N-CHANNELMOSFETKIA SEMICONDUCTORS 10N80HKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1OCT2014