10N80

10N80 NELLSEMI

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Technical content

G D S D SEMICONDUCTOR RoHS RoHS Nell High Power Products 10N80 Series N-Channel Power MOSFET 10A, 800Volts

DESCRIPTION

Low reverse transfer capacitance (C = 15pF typical)RSS R = 1.1Ω @ V = 10V DS(ON) GS Ultra low gate charge(58nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 10 V (V)DSS 800 1.1 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G UNIT V /ns V °C/W A mJ ºC -55 to 150 VALUE 6.2 800 ±30 800 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1. Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 10 T =25°C C 2.l =10A, L=17.3mH, V =50V, R =25Ω, starting T =25°C.AS DD GS J 920Single pulse avalanche energy(Note 2)EAS 3.I ≤ 10A, di/dt ≤ 200A/µs, V ≤ V , T °C.SD DD (BR)DSS Jstarting = 25 0.296 Linear derating factor above T =25°C C 24Repetitive avalanche energy(Note 1)EAR l =10A, R =10VAR GS=50Ω, V GS l =10A, =17.3mHAS L W www.nellsemi.com Page 1of 6 They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. threshold voltage of 5 volts. TO-220F ( )10N80AF ( )10N80B G DS D (Drain) G (Gate) S (Source) 240 1.92 T =25°C C TO-3PB TO-220F TO-3PB TO-220F

UNITMIN. 0.52 3.4 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to case SYMBOL Rth(j-c) TYP. MAX. ºC/W Thermal resistance, junction to ambientRth(j-a) UNIT V ns μA pF nC MAX. 100 800 -100 100 0.98 2150 130 180 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 250μA, D V = 0VGS TEST CONDITIONS I = 250μA, D V =VDS GS V =800V, V =0V DS GS T =25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 13.5Gate to source charge Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) V/ºC Ω nA T =125°C C TYP.MIN. V =400V, DD (Note1,2) V =10VGS I =10A, R =25Ω D GS V =25V, V =0V, f=1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS V =640V, V =0V DS GS OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS 2800 230 SWITCHING CHARACTERISTICS 170 110 270 190 V = 640V, DD (Note1,2) V =10VGS I =10A, D 0.9 1.1Static drain to source on-state resistanceRDS(ON) V =10V, l =5A GS D

3 V5V =V , I =250μA GS DS DGate threshold voltageVGS(TH)

Gate to drain charge (Miller charge)QGD 17 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT VSD Diode forward voltage I = 10A, V = 0VSD GS 1.4 V Is (IsD) Continuous source to drain current Integral reverse P-N junction diode in the MOSFET D (Drain) G (Gate) S (Source) A ISM Pulsed source current 40 trr Reverse recovery time 730 nsI = 10A, V = 0V, SD GS dI /dt = 100A/µs FQrr Reverse recovery charge 10.9 μC Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2of 6 TO-220F TO-3PB TO-220F TO-3PB TO-220F 62.5

ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 10 = 10A 80 = 800V

10 N 80 B

B = TO-3PB N = N-Channel AF = TO-220F ■ TEST CIRCUITS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T) www.nellsemi.com Page 3of 6

■ TEST CIRCUIT(Cont.) Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms Same Type as D.U.T. VDS D.U.T. 3mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VGS Charge L VDS RG 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t) www.nellsemi.com Page 4of 6

Fig.1 Drain current vs. Source to drain voltage Source to drain voltage, V (mV)SD Drain to Source voltage, V (V)DS Fig.4 Drain current vs. Drain-Source breakdown voltage Drain Current, l (A) D Drain current, l (µA)D Drain current, l (A)D Drain-Source breakdown voltage, BV (V)DSS Fig.3 Drain current vs. Gate threshold voltage Drain current, l (mA)D Gate threshold voltage, V (V)GS(TH) Fig.2 Drain-source on-state resistance characteristics ■ TYPICAL CHARACTERISTICS 0 200 400 600 800 1000 0 1 2 3 4 5 2.5 1.5 0.5 0 1 2 3 4 0 200 400 600 800 400 350 300 250 200 150 100 www.nellsemi.com Page 5of 6 V = 10VGS l = 5AD 1000

15.6±0.4 9.6 2.04.0 19.9±0.320.0 min 4.0 max 2 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 Φ3.2 0,1± 1.8 5.0 .±0 2 4.8±0.2 2.0±0.1 0.65 +0.2 -0.1 1.4 G D S 1 2 3 All dimensions in millimeters 10N80 Series www.nellsemi.com Page 6of 6 TO-220F 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 D (Drain) G (Gate) S (Source) D (Drain) G (Gate) S (Source)