10N65 ISC

Document overview

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Technical content

INCHANGE Semiconductor isc Product Specification isc website ：： ：：www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2N65

  • · ··FEATURES
  • Drain Current I D= 2A@ T C=25 ℃
  • Drain Source Voltage3 : V DSS = 650V(Min)
  • Static Drain3Source On3Resistance : R DS(on) = 5.0 Ω(Max)
  • Fast Switching
  • · ··APPLICATIONS
  • Switching power supplies,converters,AC and DC motor controls
  • · ··ABSOLUTE MAXIMUM RATINGS(T a=25 ℃℃ ℃℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain3Source Voltage 650 V VGS Gate3Source Voltage3Continuous ±30 V ID Drain Current3Continuous 2 A IDM Drain Current3Single Plused 8 A PD Total Dissipation @T C=25 ℃ 54 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature 355~150 ℃
  • · ··THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j3c Thermal Resistance, Junction to Case 2.32 ℃/W Rth j3a Thermal Resistance, Junction to Ambient 62.5 ℃/W

INCHANGE Semiconductor isc Product Specification isc website ：： ：：www.iscsemi.com isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor 2N65

  • · ··ELECTRICAL CHARACTERISTICS TC=25 ℃℃ ℃℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain3Source Breakdown Voltage V GS = 0; ID=250µA 650 V VGS (th ) Gate Threshold Voltage V DS = V GS; ID=250µA 2.0 4.0 V VSD Diode Forward On3voltage I S= 2A ;VGS = 0 1.4 V RDS(on ) Drain3Source On3Resistance V GS = 10V; ID= 1A 5.0 Ω IGSS Gate3Body Leakage Current V GS = ±30V;V DS = 0 ±100 nA IDSS Zero Gate Voltage Drain Current V DS =650V; V GS = 0 10 µA
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