10N60H KIA

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Technical content

9.5A，600V N-CHANNELMOSFET 1.Description TheKIA10N60HN-ChannelenhancementmodesilicongatepowerMOSFETisdesigned forhighvoltage,highspeedpowerswitchingapplicationssuchashighefficiencyswitchedmodepower supplies,activepowerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology. 2.Features n RDS(on)=0.6Ω@V GS=10V n Lowgatecharge(typical44nC) n Fastswitchingcapability n avalancheenergyspecified n Improveddv/dtcapability 3. Pinconfiguration 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

9.5A，600V N-CHANNELMOSFET 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 600 V Gate-sourcevoltage VGSS +30 V Draincurrentcontinuous TC=25ºC ID 9.5* A TC=100ºC 5.7* A Draincurrentpulsed(note1) IDP 38.0* A Avalancheenergy Repetitive(note1) EAR 15.6 mJ Singlepulse(note2) EAS 700 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25 ºC PD 50 W derateabove25 ºC 0.4 W/ºC Junctiontemperature TJ +150 ºC Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RthJA 62.5 ºC/W Thermalresistance,case-to-sinktyp. RthCS - ºC/W Thermalresistance,Junction-case RthJC 2.5 ºC/W 2of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 10N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS

9.5A，600V N-CHANNELMOSFET 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 600 - - V Zerogatevoltagedraincurrent IDSS VDS=600V,V GS=0V - - 1 μA VDS=480V,T C=125 ºC - - 10 μA Gate-bodyleakagecurrent Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperaturecoefficient △BVDSS/△TJ ID=250μA - 0.7 - V/°C Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VDS=10V,ID=4.75A - 0.6 0.73 Ω Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 1570 2040 pF Outputcapacitance Coss - 166 215 pF Reversetransfercapacitance Crss - 18 24 pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=300V,ID=9.5A, RG=25Ω(note4,5) - 23 55 ns Risetime tr - 69 150 ns Turn-offdelaytime td(off) - 144 300 ns Falltime tf - 77 165 ns Totalgatecharge Qg VDS=480V,ID=9.5A, VGS=10V(note4,5) - 44 57 nC Gate-sourcecharge Qgs - 6.7 - nC Gate-draincharge Qgd - 18.5 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=9.5A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 9.5 A Pulseddrain-sourcecurrent ISM - - 38.0 A Reverserecoverytime trr ISD=9.5A dlSD/dt=100A/μs (note4) - 420 - ns Reverserecoverycharge Qrr - 4.2 - μC Note:1.repetitiverating:pulsewidthlimitedbymaximumjunctio/ntemperature 2.L=14.2mH,IAS=9.5A,VDD=50V,RG=25Ω,staringT J=25ºC 3.ISD<9.5A,di/dt<200A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 10N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS

9.5A，600V N-CHANNELMOSFET 7.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 10N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS

9.5A，600V N-CHANNELMOSFET 5of5 Rev1.1JAN2014 KIA SEMICONDUCTORS 10N60HKIA SEMICONDUCTORS KIA SEMICONDUCTORS