10N60

10N60 NELLSEMI

Document overview

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Technical content

(10A, 600Volts) TO-220AB (1 )0N60A TO-220F (1 F)0N60A D They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 18pF typical)RSS R = 0.8Ω@V = 10V DS(ON) GS Ultra low gate charge(57nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 10 V (V)DSS 600 0.8 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G GDS G SD D (Drain) G (Gate) S (Source) www.nellsemi.com Page 1 of 9 G S D 2TO-263(D PAK) (1 )0N60H

V W A mJ ºC -55 to 150 VALUE 6.2 600 ±30 700 600 156 4.5 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Single pulse avalanche energy (Note 2) Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM EAS TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1.Repetitive rating: pulse width limited by junction temperature. TO-220AB/ TO-263 TO-220F UNITMin. 62.5 0.8 62.5 2.5 THERMAL RESISTANCE TO-220AB/ TO-263 TO-220F TO-220AB/TO-263 TO-220F PARAMETER Thermal resistance, junction to ambient Thermal resistance, junction to case SYMBOL Rth(j-c) Rth(j-a) Typ. Max. ºC/W 10 (1.1) 1.6mm from case 10N60 Series IAR Avalanche current(Note 1) 10 I =10A, L = 14.2mHAS T =25°C C 2.I = 10A, V = 50V, L = 14.2mH, R = 25Ω, starting T =25°C.AS DD GS J www.nellsemi.com Page 2 of 9 15.6Repetitive avalanche energy(Note 1)EAR I =10A, R =50Ω, V =10VAR GS GS 3.I ≤ 10A, di/dt ≤ 200A/µs, V ≤ V , starting T =25°C.SD DD (BR)DSS J

V ns μA pF nC Max. 2.0 100 600 0.72 -100 100 0.7 1570 144 166 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 250µA, V = 0VD GS TEST CONDITIONS I = 250µA, D V = VDS GS V =600V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 6.7Gate to source charge V = 480V, V = 10V, I = 10A DD GS D (Note 1, 2) Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) V/ºC Ω V nA T =125°C C Typ.Min. 0.80 4.0 2040 215 150 300 165 UNIT V μC Max. SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 10A, V = 0VSD GS TEST CONDITIONS Integral reverse P-N junction diode in the MOSFET I = 10A, V = 0V, SD GS dI /dt = 100A/µs F PARAMETER Reverse recovery time Pulsed source current Continuous source to drain current Diode forward voltage SYMBOL Is (IsD) VSD ISM trr Reverse recovery chargeQrr A ns Typ.Min. 420 4.2 D (Drain) G (Gate) S (Source) 1.4 Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. V = 300V, DD R (Note 1, 2) V = 10V, I = 10AGS D = 25ΩGS V = 25V, V = 0V, f =1MHzDS GS V = -30V, V = 0VGS DS V = 30V, V = 0VGS DS V =V , I =250μA GS DS DGate threshold voltage Static drain to source on-state resistanceRDS(ON) VGS(TH) I = 5A, V = 10VD GS 10N60 Series Gate to drain charge (Miller charge)QGD 18.5 2. Essentially independent of operating temperature. www.nellsemi.com Page 3 of 9 V =480V, V =0V DS GS

ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 10 = 10A 60 = 600V

10 N 60 A

A = TO-220AB AF = TO-220F 2H = TO-263P(D PAK) N = N-Channel 10N60 Series www.nellsemi.com Page 4 of 9 ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T)

www.nellsemi.com Page 5 of 9 ■ TEST CIRCUITS AND WAVEFORMS(Cont.) Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms Same Type as D.U.T. VDS D.U.T. 3mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VGS Charge L VDS RG 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t)

Fig.1 On-State characteristics Drain-Source voltage, V (V)DS Gate-Source voltage, V (V)GS Fig.4 Body diode forward voltage variation with Source current and Temperatue Drain Current, l (A) D Reverse drain current, l (A)DR Drain current, l (A)D Source-Drain voltage, V (V)SD Capacitance, (pF) Drain-Source voltage, V (V)DC Fig.3 On-Resistance variation vs. drain current and gate voltage Drain-Source On-Resistance, R (Ω)DS(ON) Drain current, I (A)D Fig.2 Transfer characteristics ■ TYPICAL CHARACTERISTICS -110 010 110 2 4 6 8 10 1.0 0.5 0.0 0 5 10 15 20 25 1.5 2.0 Fig.5 Capacitance characteristics Fig.6 Gate charge characteristics Gate-to-Source voltage,V (V)GS 3000 2500 1500 3000 1000 500 0 10 20 30 40 50 Total gate charge, Q (nC)G 10N60 Series -110 010 110 010-110 110 www.nellsemi.com Page 6 of 9 -110 010 110 110010-110 VGS Top: 15V 10V 6.5V 5.5V 5.0V Bottorm: 4.5V Note: 2. T 250µs Pulse Test = 25°CC -55ºC 150ºC 25ºC Note: 1. V = 40VDS 2. 250µs Pulse Test V = 10VGS V = 20VGS Note: T = 25°CJ 1.4 150ºC 25ºC Note: 1. V = 0VGS 2. 250µs Pulse Test CISS COSS CRSS Note: 1. V = 0VGS 2. f = 1MHz V = 120VDS V = 300VDS V = 450VDS Note: l = 10AD

Fig.7 Breakdown voltage variation vs. Temperature Fig.8 On-Resistance variation vs. Temperature Fig.9 Maximum safe operating area Drain-Source breakdown voltage, BV (Normalized) Dss Drain-Source On-Resistance, R (Normalized) Ds(ON) , Drain current, l , (A)D 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 200 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 010 110 210 -110 110 210 310010 Junction temperature, T (°C)j Junction temperature, T (°C)J Drain-Source voltage, V (V)DS Nell High Power Products 10N60 Series Fig.10 Maximum drain current vs. Case temperature 25 50 75 100 125 150 Drain current, l , (A)D Case temperature, T (°C)C www.nellsemi.com Page 7 of 9 Note: 1. V = 0VGS 2. l = 250μAD Note: 1. V = 0VGS 2. l = 250μAD 200-100 Note: 1. V = 10VGS 2. l = 4.75AD Operation in This Area by RDM is United 100μs 1ms 100ms 10ms DC 2. Duty factor, D = t / t1 2 3. T - T = P * R (t) JW C DW th(j-c) 1. Rth(j-c) (t) = 0.80°C/W Max. 010 110 Fig.11 Transient thermal response curve 0.2 0.1 0.05 0.01 PDW Notes: Thermal response, R (t)th(j-c) 10-2 -110 010 10-3 -11010-2-410-510 Square wave pulse duration, t (sec)1 0.02 D = 0.5 Single pulse 10μs Note: 1.T = 25°CC 2.T = 150°CJ 3.Sing Pulse

2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB All dimensions in millimeters(inches) All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source) D (Drain) G (Gate) S (Source) www.nellsemi.com Page 8 of 9 2TO-263(D PAK) 2.79 (0.110) 0.36 (0.014) 2.79 (0.110) 2.29 (0.090) 1.40 (0.055) 1.19 (0.047) 0 to 0.254 (0 to 0.01) 1.40 (0.055) 1.14 (0.045) 4.83 (0.190) 4.06 (0.160) 10.45 (0.411) 9.65 (0.380) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) 15.00 (0.591) 0.940 (0.037) 0.686 (0.027) 2.67 (0.105) 2.41 (0.095) 5.20 (0.205) 4.95 (0.195) 15.85 (0.624) 3.56 (0.140) 0.53 (0.021)

www.nellsemi.com Page 9 of 9 Case Style TO-220F 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 RoHS RoHS Nell High Power Products D (Drain) G (Gate) S (Source) 10N60 Series