VS-10MQ040NPBF_V01 VISHAY

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Technical content

www.vishay.com Vishay Semiconductors Revision: 16-Feb-14 1 Document Number: 94117 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Performance Schottky Rectifier, 1 A

FEATURES

  • Small foot print, surface mountable
  • Low forward voltage drop
  • High frequency operation
  • Guard ring for enhanced ruggedness and long term reliability
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
  • Designed and qualified for industrial level
  • Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

The VS-10MQ040NPbF surface mount Schottky rectifier has been designed for applic ations requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drive s, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. PRODUCT SUMMARY Package DO-214AC (SMA) IF(AV) 1 A VR 40 V VF at IF 0.54 V IRM 26 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 3.0 mJ Cathode Anode DO-214AC (SMA) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I F(AV) Rectangular waveform 1 A VRRM 40 V IFSM tp = 5 μs sine 120 A VF 1.5 Apk, TJ = 125 °C 0.56 V TJ Range -55 to +150 °C VOLTAGE RATINGS PARAMETER SYMBOL VS-10MQ040NPbF UNITS Maximum DC reverse voltage V R

40 VMaximum working peak reverse voltage V RWM

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 4 I F(AV) 50 % duty cycle at TL = 123 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1.5 A50 % duty cycle at TL = 132 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 1 Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated V RRM applied 120 A10 ms sine or 6 ms rect. pulse 30 Non-repetitive avalanche energy E AS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ Repetitive avalanche current I AR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A

www.vishay.com Vishay Semiconductors Revision: 16-Feb-14 2 Document Number: 94117 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Pulse width < 300 μs, duty cycle < 2 % Note (1) thermal runaway condition for a diode on its own heatsink ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop See fig. 1 V FM (1) 1 A TJ = 25 °C 0.54 V 1.5 A 0.62 1 A T J = 125 °C 0.49 1.5 A 0.56 Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR 0.5 mA TJ = 125 °C 26 Threshold voltage V F(TO) TJ = TJ maximum 0.36 V Forward slope resistance r t 104 m  Typical junction capacitance C T VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 38 pF Typical series inductance L S Measured lead to lead 5 mm from package body 2.0 nH Maximum voltage rate of change dV/dt Rated V R 10 000 V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and  storage temperature range T J (1), TStg -55 to +150 °C Maximum thermal resistance,  junction to ambient RthJA DC operation 80 °C/W Approximate weight 0.07 g 0.002 oz. Marking device Case style SMA (similar D-64) 1F dPtot dTJ RthJA

www.vishay.com Vishay Semiconductors Revision: 16-Feb-14 3 Document Number: 94117 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR VFM - Forward Voltage Drop (V) IF - Instantaneous Forward Current (A)0.1 TJ = 25 °C TJ = 150 °C TJ = 125 °C 0.01 0.001 VR - Reverse Voltage (V) IR - Reverse Current (mA) 0.0001 4035 0.1 10 15 25 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 100 5 20 30 100 VR - Reverse Voltage (V) CT - Junction Capacitance (pF) 4010 20 30 35 TJ = 25 °C 5 15 25 IF(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 110 150 0 0.4 0.8 1.2 2.4 100 120 130 D = 0.20 D = 0.33 D = 0.50 D = 0.75 D = 0.25 DC See note (1) Square wave (D = 0.50) 80 % rated V R applied 1.6 2.0 140 IF(AV) - Average Forward Current (A) Average Power Loss (W) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 RMS limit DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.6 tp - Square Wave Pulse Duration (µs) 100 IFSM - Non-Repetitive Surge Current (A) 10 100 1000 10 000 At any rated load condition and with rated V RRM applied following surge

www.vishay.com Vishay Semiconductors Revision: 16-Feb-14 4 Document Number: 94117 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ORDERING INFORMATION TABLE ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10MQ040NTRPbF 5AT 7500 13" diam eter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?95277 2 - Current rating (10 = 1 A) 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (040 = 40 V) 6 - N = new SMA 7 - TR = tape and reel - PbF = lead (Pb)-free8 1 - Vishay Semiconductors product Device code 51 32 4 6 7 8 VS- 10 M Q 040 N TR PbF

Document Number: 95400 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 SMA Outline Dimensions Vishay Semiconductors DIMENSIONS in inches (millimeters) DO-214AC (SMA) Mounting Pad Layout 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) Cathode band 0 (0) 0.030 (0.76) 0.060 (1.52) 0.074 (1.88) MAX. 0.208 (5.28) REF. 0.066 (1.68) MIN. 0.060 (1.52) MIN.

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