10ETF12PBF

10ETF10 VISHAY

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Document Number: 94092 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 15-Apr-08 1 Fast Soft Recovery Rectifier Diode, 10 A 10ETF...PbF Soft Recovery Series Vishay High Power Products FEATURES/DESCRIPTION The 10ETF...PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. This product series has been designed and qualified for industrial level and lead (Pb)-free.

APPLICATIONS

• Output rectification and freewheeling in inverters, choppers and converters  Input rectifications where se vere restrictions on conducted EMI should be met PRODUCT SUMMARY VRRM 1000 to 1200 V VF at 10 A < 1.33 V trr 80 ns Anode CathodeTO-220AC Base cathode Available Pb-free RoHS* COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS VRRM 1000 to 1200 V IF(AV) Sinusoidal waveform 10 A IFSM 160 trr 1 A, 100 A/µs 80 ns VF 10 A, TJ = 25 °C 1.33 V TJ - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 10ETF10 1000 1100 10ETF12 1200 1200 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) TC = 125 °C, 180° conduction half sine wave 10 AMaximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 160 10 ms sine pulse, no voltage reapplied 185 Maximum I2t for fusing I 2t 10 ms sine pulse, rated VRRM applied 128 A2s 10 ms sine pulse, no voltage reapplied 180 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 1800 A 2√s * Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 94092

2 Revision: 15-Apr-08

10ETF...PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 10 A, TJ = 25 °C 1.33 V Forward slope resistance r t TJ = 150 °C 22.9 m Ω Threshold voltage V F(TO) 0.96 V Maximum reverse leakage current I RM TJ = 25 °C VR = Rated VRRM 0.1 mA TJ = 150 °C 4 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t rr IF at 10 Apk

25 A/µs

25 °C 310 ns Reverse recovery current I rr 4.7 A Reverse recovery charge Q rr 1.05 µC Typical snap factor S 0.6 IFM trr dir dt IRM(REC) Qrr t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance junction to case RthJC DC operation 1.5 °C/WMaximum thermal resistance junction to ambient RthJA 62 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.5 Approximate weight 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in)maximum 12 (10) Marking device Case style TO-220AC (JEDEC) 10ETF12

Document Number: 94092 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 15-Apr-08 3 10ETF...PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 150 115 0246 8 10 12 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 30° 60° 90° 180° 120° 10ETF .. Series RthJC(DC) = 1.5 °C/W Conduction angle 145 140 135 130 125 120 Ø 0246 8 10 16 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 30° 60° 90° 180° 120° 10ETF .. Series RthJC(DC) = 1.5 °C/W DC Ø Conduction period 12 14 150 115 145 140 135 130 125 120 0246 8 10 Maximum Average Forward Power Loss (W) Average Forward Current (A) 30° 60° 90° 180° 120° RMS limit 10ETF .. Series TJ = 150 °C Conduction angle Ø 0246 8 16 Maximum Average Forward Power Loss (W) Average Forward Current (A) 10ETF .. Series TJ = 150 °C DC 30° 60° 90° 180° 120° RMS limit Ø Conduction period 10 12 14 180 1 10 100 Peak Half Sine Wave Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 140 100 120 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 10ETF.. Series 160 200 0.01 0.1 1 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 140 100 120 160 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 10ETF.. Series 180

www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 94092

4 Revision: 15-Apr-08

10ETF...PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C 1000 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 10ETF.. Series TJ = 150 °C TJ = 25 °C 100 4.03.0 3.5 0.6 0.3 04 0 80 120 160 200 trr - Maximum Reverse Recovery Time (µs) dI/dt - Rate of Fall of Forward Current (A/µs) 0.1 0.2 0.5 0.4 10ETF .. Series TJ = 25 °C IFM = 10 A IFM = 1 A IFM = 2 A IFM = 5 A IFM = 8 A 0.8 0.6 04 0 80 120 160 200 trr - Maximum Reverse Recovery Time (µs) dI/dt - Rate of Fall of Forward Current (A/µs) 0.2 0.4 10ETF .. Series TJ = 150 °C IFM = 8 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A 1.6 04 0 80 120 160 200 Qrr - Maximum Reverse Recovery Charge (µC) dI/dt - Rate of Fall of Forward Current (A/µs) 0.4 0.8 1.2 IFM = 1 A IFM = 2 A IFM = 5 A IFM = 10 A IFM = 8 A 10ETF .. Series TJ = 25 °C 2.0 04 0 80 120 160 200 Qrr - Maximum Reverse Recovery Charge (µC) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 150 °C IFM = 1 A IFM = 2 A IFM = 5 A IFM = 10 A IFM = 8 A 04 0 80 120 160 200 Irr - Maximum Reverse Recovery Current (A) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 25 °C IFM = 1 A IFM = 2 A IFM = 5 A IFM = 10 A IFM = 8 A

Document Number: 94092 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 15-Apr-08 5 10ETF...PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products Fig. 13 - Recovery Current Characteristics, TJ = 150 °C Fig. 14 - Thermal Impedance ZthJC Characteristics 04 0 80 120 160 200 Irr - Maximum Reverse Recovery Current (A) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 150 °C IFM = 10 A IFM = 5 A IFM = 2 A IFM = 1 A IFM = 8 A 0.1 100.001 0.01 0.1 1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (°C/W)0.001 0.01 10ETF.. SeriesSingle pulse Steady state value (DC operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08

www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 94092

6 Revision: 15-Apr-08

10ETF...PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ORDERING INFORMATION TABLE 1 - Current rating (10 = 10 A) 2 - Circuit configuration: E = Single diode T = TO-220AC 4 - Type of silicon: F = Fast soft recovery rectifier 5 - Voltage code x 100 = V RRM 6 - None = Standard production PbF = Lead (Pb)-free 10 = 1000 V 12 = 1200 V Device code 513 24 6

10 E T F 12 PbF

LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95221 Part marking information http://www.vishay.com/doc?95224

Document Number: 95221 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 TO-220AC Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93° E 10.11 10.51 0.398 0.414 3, 6 13 2 D Q Detail B C A B L Lead tip E Ø P

0.015 A BMM

0.014 A BMM

c AA A Lead assignments Diodes 1 + 2 - Cathode 3 - Anode Conforms to JEDEC outline TO-220AC (6) (6) (7) (6) (7) View A - A θ E1 (6) D2 (6) Thermal padE Detail B D D 12 3 CC 2 x b2 2 x b

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