10ETF12PBF

10ETF12PBF IRF

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IF(AV) Sinusoidal waveform 10 A VRRM 1200 V IFSM 160 A VF @ 10 A, TJ = 25°C 1.33 V trr @ 1A, 100A/µs 80 ns TJ - 40 to 150 °C Major Ratings and Characteristics Characteristics Values Units Description/ Features The 10ETF12PbF fast soft recovery QUIETIR rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met. TO-220AC Package Outline Bulletin I2188 12/04 QUIETIR Series 10ETF12PbF VF < 1.33V @ 10A trr = 80ns VRRM = 1200V FAST SOFT RECOVERY RECTIFIER DIODE Lead-Free ("PbF" suffix) www.irf.com

www.irf.com IF(AV) Max. Average Forward Current 10 A @ T C = 125° C, 180° conduction half sine wave IFSM Max. Peak One Cycle Non-Repetitive 160 10ms Sine pulse, rated VRRM applied Surge Current 185 10ms Sine pulse, no voltage reapplied I2t Max. I 2t for fusing 128 10ms Sine pulse, rated V RRM applied 180 10ms Sine pulse, no voltage reapplied I2√t Max. I 2√t for fusing 1800 A 2√s t = 0.1 to 10ms, no voltage reapplied Part Number VRRM , maximum V RSM , maximum non repetitive I RRM peak reverse voltage peak reverse voltage 150°C VV m A 10ETF12 1200 1300 4 Voltage Ratings Absolute Maximum Ratings Electrical Specifications Recovery Characteristics Parameters 10ETF.. Units Conditions A A2s VFM Max. Forward Voltage Drop 1.33 V @ 10A, T J = 25°C rt Forward slope resistance 22.9 m Ω TJ = 150°C VF(TO) Threshold voltage 0.96 V IRM Max. Reverse Leakage Current 0.1 T J = 25 °C 4T J = 150 °C Parameters 10ETF.. Units Conditions VR = rated VRRMmA trr Reverse Recovery Time 310 ns I F @ 10Apk Irr Reverse Recovery Current 4.7 A @ 25A/ µs Qrr Reverse Recovery Charge 1.05 µC @ 25°C S Typical Snap Factor 0.6 Parameters 10ETF.. Units Conditions

www.irf.com TJ Max. Junction Temperature Range - 40 to 150 °C Tstg Max. Storage Temperature Range - 40 to 150 °C RthJC Max. Thermal Resistance Junction 1.5 °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 62 °C/W to Ambient RthCS Typical Thermal Resistance, Case to 0.5 °C/W Mounting surface , smooth and greased Heatsink wt Approximate Weight 2 (0.07) g (oz.) T Mounting Torque Min. 6 (5) Max. 12 (10) Case Style TO-220AC JEDEC Marking Device 10ETF12 Thermal-Mechanical Specifications Parameters 10ETF.. Units Conditions Kg-cm (Ibf-in) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics 115 120 125 130 135 140 145 150 02468 1 0 1 2 30° 60° 90° 120° 180° Maxi mum Allowabl e Cas e T emperature (° C) Conduction Angle Aver age F or war d Curr ent (A) 10ET F.. S eries R (DC) = 1.5 °C/ WthJC 115 120 125 130 135 140 145 150 0 2 4 6 8 1 01 21 41 6 DC 30° 60° 90° 120° 180° Maximum Allowable Cas e T emperature (°C) Conduction Period Average F orward Current (A) 10E TF.. S eries R (DC) = 1.5 °C/ WthJC 02468 1 0 RM S Lim it 180° 120° 90° 60° 30° Conduction Angle Average F orward Current (A) Maximum Average F orward P ower L os s (W) 10.T F.. S eries T = 150°C J 0 2 4 6 8 10 12 14 16 DC 180° 120° 90° 60° 30° RMS Lim it Conduction Period Average F orward Current (A) Max imum Average F or war d P ower L os s (W ) 10ET F.. S eries T = 150°C J

www.irf.com Fig. 8 - Recovery Time Characteristics, TJ = 25°C Fig. 9 - Recovery Time Characteristics, TJ = 150°C Fig. 7 - Forward Voltage Drop Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 100 120 140 160 180 11 0 1 0 0 Numb er Of Eq ua l Amp litude Ha lf Cyc le Current Pulses (N) P eak Half S ine Wave F orward Current (A) Initial T = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any R ated L oad Condition And With R ated V Applied F ol lowing S ur ge.RRM 10E T F.. S eries 100 120 140 160 180 200 0.01 0.1 1 P uls e T rain Duration (s ) P eak H al f S i ne Wave F or war d Curr ent (A) Vers us P uls e T rain Duration. Initial T = 150°C No Voltage R eappl ied R ated V R eappliedRRM J Maximum Non R epetitive Surge Current 10ET F.. S eries 100 1000 T = 2 5 ° C Ins tantaneous F orward Curr ent (A) I ns tantaneous F or war d Vol tage (V) T = 150°CJ J 10ET F.. S eries 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 200 Rate Of F all Of F orward Current - di/ dt (A/ µs ) 1 A 5 A Ma ximum Reverse Rec overy T ime - T rr (µs) 8 A 2 A I = 10 AFM 10ET F.. S eries T = 25 °CJ 0.2 0.4 0.6 0.8 0 40 80 120 160 200 R ate Of F all Of F orward Current - di/dt (A/ µs ) 1 A 5 A Maximum R evers e R ecovery T ime - T rr (µs) I = 10 AFM 2 A 8 A 10ETF.. S eries T = 150 °CJ

www.irf.com Fig. 14 - Thermal Impedance ZthJC Characteristics Fig. 12 - Recovery Current Characteristics, TJ = 25°C Fig. 13 - Recovery Current Characteristics, T J = 150°C Fig. 10 - Recovery Charge Characteristics, TJ = 25°C Fig. 11 - Recovery Charge Characteristics, TJ = 150°C 0.4 0.8 1.2 1.6 0 40 80 120 160 200 R ate Of F all Of F orward Cur r ent - di/dt (A/µs ) 1 A 5 A Maximum R evers e R ecovery Charge - Qrr (µC) I = 10 AFM 2 A 8 A 10ETF.. S eries T = 2 5 ° CJ 0 40 80 120 160 200 R ate Of F all Of F or war d Current - di/dt (A/µs ) 1 A 5 A Maximum R evers e R ecovery Charge - Qrr (µC) I = 10 AFM 2 A 8 A 10ET F.. S eries T = 150 °CJ 0 40 80 120 160 200 Maximum Reverse Rec overy Current - Irr (A) R ate Of F all Of F orward Current - di/dt (A/µs ) 1 A 5 A 8 A 2 A I = 10 AFM 10E T F .. S eries T = 2 5 ° CJ 0 40 80 120 160 200 Maximum R evers e R ecovery Current - Irr (A) R ate Of F all Of F orward Cur rent - di/dt (A/µs ) 1 A 5 A I = 10 AFM 8 A 2 A 10E T F.. S eries T = 150 °CJ 0.001 0.01 0.1 0.001 0.01 0.1 1 10 S quare Wave P uls e Duration (s ) S teady S tate V alue (D C Operation) S ingle Pulse thJCT rans ient T hermal Impedance Z (°C/W) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 10E T F.. Series

www.irf.com 3.78 (0.15) 3.54 (0.14) 10.54 (0.41) MAX. DIA. 15.24 (0.60) 14.84 (0.58) 2.92 (0.11) 2.54 (0.10) TERM 2 14.09 (0.55) 13.47 (0.53) 3.96 (0.16) 3.55 (0.14) 0.94 (0.04) 0.69 (0.03) 4.57 (0.18) 4.32 (0.17) 3 0.61 (0.02) MAX. 5.08 (0.20) REF. 1.32 (0.05) 1.22 (0.05) 6.48 (0.25) 6.23 (0.24) 0.10 (0.004) 1.40 (0.05) 1.15 (0.04) 2.89 (0.11) 2.64 (0.10) 2.04 (0.080) MAX. Outline Table Dimensions in millimeters and inches LOT CODE ASSEMBLY RECTIFIER INTERNATIONAL IRMX Assembly Line EXAMPLE: ASSEMBLED ON WW 19, 2001 IN THE ASSEMBLY LINE "C" LOT CODE 1789 LOGO P = LEAD-FREE PART NUMBER WEEK 19 YEAR 1 = 2001 DATE CODE THIS IS A 10ETF12 Part Marking Information Anode 1 3 Cathode Base Cathode

www.irf.com Ordering Information Table

10 E T F 12 PbF

1 - Current Rating (10 = 10A) 2 - Circuit Configuration: E = Single Diode T = TO-220AC 4 - Type of Silicon: F = Fast Soft Recovery Rectifier 5 - Voltage Rating (12 = 1200V) 6 - y none = Standard Production y PbF = Lead-Free IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/04 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.