10ETF VISHAY
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Document Number: 93132 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 04-Jun-08 1 Fast Soft Recovery Rectifier Diode, 10 A 10ETF.. Soft Recovery Series Vishay High Power Products FEATURES/DESCRIPTION The 10ETF.. fast soft recove ry rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. This product series has been designed and qualified for industrial level.
APPLICATIONS
- Output rectification and freewheeling in inverters, choppers and converters Input rectifications where se vere restrictions on conducted EMI should be met PRODUCT SUMMARY VRRM 200 to 600 V VF at 10 A < 1.2 V trr 50 ns TO-220AC Base cathode Anode Cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS VRRM 200 to 600 V IF(AV) Sinusoidal waveform 10 A IFSM 150 trr 1 A, 100 A/µs 50 ns VF 10 A, TJ = 25 °C 1.2 V TJ - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 10ETF02 200 300 210ETF04 400 500 10ETF06 600 700 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) TC = 128 °C, 180° conduction half sine wave 10 AMaximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 150 10 ms sine pulse, no voltage reapplied 160 Maximum I2t for fusing I 2t 10 ms sine pulse, rated VRRM applied 112.5 A2s 10 ms sine pulse, no voltage reapplied 160 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 1600 A 2√s
www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 93132
2 Revision: 04-Jun-08
10ETF.. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 10 A, TJ = 25 °C 1.2 V Forward slope resistance r t TJ = 150 °C 23.5 m Ω Threshold voltage V F(TO) 0.85 V Maximum reverse leakage current I RM TJ = 25 °C VR = Rated VRRM 0.1 mA TJ = 150 °C 3.0 RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t rr IF at 10 Apk
25 A/µs
25 °C 145 ns Reverse recovery current I rr 2.75 A Reverse recovery charge Q rr 0.32 µC Snap factor S 0.6 IFM trr dir dt IRM(REC) Qrr t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance junction to case RthJC DC operation 1.5 °C/WMaximum thermal resistance junction to ambient RthJA 62 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.5 Approximate weight 0.07 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in)maximum 12 (10) Marking device Case st yle TO-220AC (JEDEC) 10ETF02 10ETF04 10ETF06
Document Number: 93132 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 04-Jun-08 3 10ETF.. Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 130 125 150 0 6 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 428 140 60° 30° 90° 180° 10 12 10ETF .. Series RthJC (DC) = 1.5 °C/W 145 135 Conduction angle 120 120° Ø 130 125 120 150 01 0 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 621 2 140 10ETF .. Series RthJC (DC) = 1.5 °C/W 145 135 Ø Conduction period 48 1 4 60° 30° 180° 90° 120° DC Maximum Average Forward Power Loss (W) Average Forward Current (A) 10ETF .. Series TJ = 150 °C 180° RMS limit Conduction angle 60° 30° 90° 120° Ø Maximum Average Forward Power Loss (W) Average Forward Current (A) 10ETF .. Series TJ = 150 °C Ø Conduction period DC 60° 30° 180° 90° 120° RMS limit 160 1 10 100 Peak Half Sine Wave Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) 140 100 120 10ETF.. Series Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s At any rated load condition and with rated V RRM applied following surge. 180 0.01 0.1 1 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 140 100 120 10ETF.. Series Initial TJ = 150 °C No voltage reapplied Rated V RRM reapplied Maximum non-repetitive surge current versus pulse train duration. 160
www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 93132
4 Revision: 04-Jun-08
10ETF.. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C 100 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) TJ = 150 °C TJ = 25 °C 10ETF.. Series 0.20 0.15 0 40 80 120 160 200 trr - Maximum Reverse Recovery Time (µs) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 25 °C 0.05 0.10 IFM = 20 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A 0.4 0.3 0 40 80 120 160 200 trr - Maximum Reverse Recovery Time (µs) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 150 °C 0.1 0.2 IFM = 20 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A 1.4 0.6 0 40 80 120 160 200 Qrr - Maximum Reverse Recovery Charge (µC) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 25 °C 0.2 0.4 1.0 0.8 1.2 IFM = 20 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A 2.5 1.5 0 40 80 120 160 200 Qrr - Maximum Reverse Recovery Charge (µC) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 150 °C 0.5 1.0 2.0 IFM = 20 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A 0 40 80 120 160 200 Irr - Maximum Reverse Recovery Current (A) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 25 °C IFM = 20 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A
Document Number: 93132 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 04-Jun-08 5 10ETF.. Soft Recovery Series Fast Soft Recovery Rectifier Diode, 10 A Vishay High Power Products Fig. 13 - Recovery Current Characteristics, TJ = 150 °C Fig. 14 - Thermal Impedance ZthJC Characteristics 0 40 80 120 160 200 Irr - Maximum Reverse Recovery Current (A) dI/dt - Rate of Fall of Forward Current (A/µs) 10ETF .. Series TJ = 150 °C IFM = 20 A IFM = 1 A IFM = 10 A IFM = 5 A IFM = 2 A 0.1 100.001 0.01 0.1 1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (°C/W) Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 10ETF .. Series Steady state value (DC operation) 0.01 0.001
www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 93132
6 Revision: 04-Jun-08
10ETF.. Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A ORDERING INFORMATION TABLE - Current rating (10 = 10 A) - Circuit configuration: E = Single diode - Package: T = TO-220AC - Type of silicon: F = Fast soft recovery rectifier - Voltage code x 100 = V RRM None = Standard production PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V Device code 513 24
10 E T F 06 -
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95221 Part marking information http://www.vishay.com/doc?95224
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1 Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier ®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN® are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.