AP10C150H A-POWER
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Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BV DSS 100V ▼ Good Thermal Performance RDS(ON) 150mΩ ▼ Fast Switching Performance ID 8A ▼ RoHS Compliant & Halogen-Free P-CH BV DSS -100V RDS(ON) 160mΩ Description ID -8A Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-channel P-channel VDS Drain-Source Voltage 100 -100 V VGS Gate-Source Voltage + 20 + 20 V ID@TC=25℃ 8 -8 A ID@TC=100℃ 5 -5 A ID@TA=25℃ 3.2 -3.2 A ID@TA=70℃ 2.5 -2.5 A IDM Pulsed Drain Current1 20 -20 A PD@TC=25℃ Total Power Dissipation W PD@TA=25℃ Total Power Dissipation3 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Value Unit Rthj-c Maximum Thermal Resistance, Junction-case 6 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 3 40 ℃/W Drain Current, VGS @ 10V Halogen-Free Product Drain Current, VGS @ 10V Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 3.13 201707201 Parameter Thermal Data 20.8 TO-252-4L D1/D2 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness.
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=250uA 100 - - V VGS=10V, ID=2A - - 150 m Ω VGS=5V, ID=1A - - 250 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance V DS=10V, ID=2A - 10 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=2A - 11 17.6 nC Qgs Gate-Source Charge V DS=50V - 2 - nC Qgd Gate-Drain ("Miller") Charge V GS=10V - 2 - nC td(on) Turn-on Delay Time V DS=50V - 7 - ns tr Rise Time I D=1A - 4 - ns td(off) Turn-off Delay Time R G=3.3Ω -1 6- ns tf Fall Time V GS=10V - 7 - ns Ciss Input Capacitance V GS=0V - 600 960 pF Coss Output Capacitance V DS=50V - 35 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 25 - pF Rg Gate Resistance f=1.0MHz - 1.8 3.6 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=2.4A, VGS=0V - - 1.3 V trr Reverse Recovery Time I S=2A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC AP10C150H RDS(ON) Static Drain-Source On-Resistance2
Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage V GS=0V, ID=-250uA -100 - - V VGS=-10V, ID=-2A - - 160 m Ω VGS=-5V, ID=-1A - - 250 m Ω VGS(th) Gate Threshold Voltage V DS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance V DS=-10V, ID=-2A - 7.5 - S IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA IGSS Gate-Source Leakage V GS=+20V, VDS=0V - - + 100 nA Qg Total Gate Charge I D=-2A - 32 51.2 nC Qgs Gate-Source Charge V DS=-50V - 5.5 - nC Qgd Gate-Drain ("Miller") Charge V GS=-10V - 5 - nC td(on) Turn-on Delay Time V DS=-50V - 12 - ns tr Rise Time I D=-1A - 4 - ns td(off) Turn-off Delay Time R G=3.3Ω -4 6- ns tf Fall Time V GS=-10V - 17 - ns Ciss Input Capacitance V GS=0V - 1900 3040 pF Coss Output Capacitance V DS=-50V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 45 - pF Rg Gate Resistance f=1.0MHz - 6 12 Ω Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage2 IS=-2.4A, VGS=0V - - -1.3 V trr Reverse Recovery Time I S=-2A, VGS=0V - 25 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 33 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3.N-CH , P-CH are same , mounted on 1 in2 2oz FR4 board t ≦10s. RDS(ON) Static Drain-Source On-Resistance2
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A =2 5o C 10V 7.0V 6.0V 5.0V V G = 4.0V V SD , Source-to-Drain Voltage (V) IS(A) T j =25 o CT j =150 o C 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = 250uA 012345 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T A = 150o C 10V 7.0V 6.0V 5.0V V G = 4.0V 102 106 110 114 23456789 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =1A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D =2A V G =10V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Transfer Characteristics 0 4 8 12 16 20 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2A V DS =50V 200 400 600 800 1000 1 2 14 16 18 1 1 0 1 1 2 1 V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + TA Rthja=75℃/W t T0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 012345 V GS , Gate-to-Source Voltage (V) ID , Drain Current (A) T j =150 o CT j =25 o C V DS =10V 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 02468 1 0 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A =2 5o C -10V -7.0V -6.0V -5.0V V G = -4.0V 110 114 118 122 126 130 2468 1 0 -V GS ,Gate-to-Source Voltage (V) RDS(ON) (m I D = -1 A T A =25 o C 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized VGS(th) I D = - 250uA 02468 -V DS , Drain-to-Source Voltage (V) -ID , Drain Current (A) T A = 150o C -10V -7.0V -6.0V -5.0V V G = -4.0V 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) I D = -2A V G = -10V -V SD , Source-to-Drain Voltage (V) -IS(A) T j =25 o CT j =150 o C
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Total Power Dissipation Fig 12. Transfer Characteristics 0 1 02 03 04 0 Q G , Total Gate Charge (nC) -VGS , Gate to Source Voltage (V) I D =- 2A V DS = -50 V 800 1600 2400 3200 1 21 41 61 81 101 121 -V DS , Drain-to-Source Voltage (V) C (pF) f=1.0MHz C iss C oss C rss 0.001 0.01 0.1 100 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) -ID (A) T A =25 o C Single Pulse 100us 1ms 10ms 100ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (Rthja) PDM Duty factor = t/T Peak Tj = PDM x Rthja + TA Rthja=75℃/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse Operation in this area limited by RDS(ON) 0 50 100 150 T A , Ambient Temperature( o C) PD, Power Dissipation(W) 012345 -V GS , Gate-to-Source Voltage (V) -ID , Drain Current (A) T j =150 o CT j =25 o C V DS = -10V
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