1014-12 ETC1
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GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120 1014 - 12
12 Watt - 28 Volts, Class C
The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes input prematching and utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55LT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 C 39 Wattso Maximum Voltage and Current BVces Collector to Emitter Voltage 50 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 5.0 A Maximum Temperatures Storage Temperature - 65 to +150 C o Operating Junction Temperature +200 C o ELECTRICAL CHARACTERISTICS @ 25 C O SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηc VSWR 1 Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance F = 1000-1400 MHz Vcc = 28 Volts Pin = 2.5 Watts As Above F = 1.4 GHz, Pin = 2.5 W 6.8 2.5 30:1 Watt Watt dB BVces BVebo Icbo h FE Cob θjc Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance Thermal Resistance Ic = 5 mA Ie = 5 mA Vcb = 28 Volts Vce = 5 V, Ic = 200mA F =1 MHz, Vcb = 28 V 3.5 12.0 3.0 4.5 Volts Volts mA pF C/Wo Issue June 1996