1.5KA6.8_08 VISHAY
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1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor Document Number: 88300 Revision: 20-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com www.vishay.com Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
FEATURES
- Patented PAR ® construction Available in uni-directional polarity only 1500 W peak pulse power capability with a 10/1000 µs waveform Excellent clamping capability Very fast response time Low incremental surge resistance Solder dip 260 °C, 40 s Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and Telecommunication. MECHANICAL DATA Case: Molded epoxy body over passivated junction Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS co mpliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS VBR 6.8 V to 47 V PPPM 1500 W PD 6.5 W IFSM 200 A TJ max. 185 °C Patent #'s 4,980,315 5,166,769 5,278,094 Patented* Case Style 1.5KA Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1) P PPM 1500 W Peak pulse current at TA = 25 °C with a 10/1000 µs waveform (1) (Fig. 3) I PPM See next table A Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) P D 6.5 W Peak forward surge current 8.3 ms single half sine-wave (2) IFSM 200 A Maximum instantaneous forward voltage at 100 A (2) VF 3.5 V Operating junction and storage temperature range T J, TSTG - 65 to + 185 °C
1.5KA6.8 thru 1.5KA47A Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com , PDD-Asia@vishay.com , PDD-Europe@vishay.com Document Number: 88300 Revision: 20-Oct-082 Notes: (1) VBR measured after IT applied for 300 µs = square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE TYPE BREAKDOWN VOLTAGE VBR (1) AT IT (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMP. COEFFICIENT OF VBR (%/°C) MIN. MAX.
Figure 5. Power Derating Curve
60 Hz Resistive
Figure 6. Maximum Non-Repetitive/Peak Forward Surge Current
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