08TB60B KIA

Document overview

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Technical content

8.0A,600V 1.Description Thisseriesarestate −of−the−artdevicesdesignedforuseinswitchingpowersupplies, invertersandasfreewheelingdiodes. 2.Features n Ultrafast35nanosecondrecoverytime n 175°Coperatingjunctiontemperature n PopularTO −220package n EpoxymeetsUL94V −0@0.125in n Lowforwardvoltage n Lowleakagecurrent n Hightemperatureglasspassivatedjunction n Reversevoltageto600V n Pb−freepackagesareavailable 3. MechanicalCharacteristics n Case:epoxy,molded n Weight:1.9grams(approximately) n Finish:allexternalsurfacescorrosionresistantandterminal n Leadsarereadilysolderable n Leadtemperatureforsolderingpurposes:260 °Cmaxfor10seconds 4. Pinconfiguration 1of2 Pin(TO220) Function

1 Cathode

3 Anode

Pin(TO-263) Function

1 Date

2 Drain

3 Source

8.0A,600V 5. Maximumratings Parameter Symbol Rating Units Peakrepetitivereversevoltage Workingpeakreversevoltage DCblockingvoltage VRRM VRWM VR 600 V Averagerectifiedforwardcurrent Totaldevice,(RatedVR),T C =150 °C IF(AV) 8.0 A Peakrepetitiveforwardcurrent (RatedVR,squarewave,20kHz),T C =150 °C IFM 16 A Nonrepetitivepeaksurgecurrent (Surgeappliedatratedloadconditionshalfwave, singlephase,60Hz) IFSM 100 A Operatingjunctiontemperatureandstorage temperaturerange TJ,Tstg -55to+175 ºC 6. Thermalcharacteristics Parameter Symbol Rating Unit Maximumthermalresistance,junction −to−case RθJC 2.0 ºC/W 7. Electricalcharacteristics Parameter Symbol Conditions Rating Unit MaximumInstantaneousForwardVoltage (Note1) VF IF=8.0A,T C=25°C 1.7 V MaximumInstantaneousReverseCurrent (Note1) IR ratedDCvoltage,T J=150°C ratedDCvoltage,T J=25°C 500 10 μA MaximumReverseRecoveryTime trr IF=1.0A,di/dt=50A/ μs IF=0.5A,I R=1.0A,I REC=0.25A 30 ns Note:1.Pulsetest:pulsewidth=300 μs,Dutycycle ≤ 2.0%. 2of2 KIA SEMICONDUCTORS 08TB60B