08065A KIA

Document overview

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Technical content

8A，650V SiliconCarbideDiodeKIA SEMICONDUCTORS 08065AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Benefits n Highersafetymarginagainstovervoltage n Improvedefficiencyallloadconditions n IncreasedefficiencycomparedtoSiliconDiodealternatives n ReductionofHeatSinkRequirements n ParallelDevicesWithoutThermalRunaway n EssentialyNoSwitchingLosses 2.Features n 650-VoltSchottkyRectifier n Shorterrecoverytime n High-speedswitchingpossible n High-FrequencyOperation n Temperature-IndependentSwitchingBehavior n ExtremelyFastSwitching n PositiveTemperatureCoefficientonVF 3.Applications n SwitchModePowerSupplies n PowerFactorCorrection n MotorDrives n HIDLighting 4. Pinconfiguration 1of3 Rev1.0JULY2018 Pin Function

1 Cathode

3 Anode

8A，650V SiliconCarbideDiodeKIA SEMICONDUCTORS 08065AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. AbsoluteMaximumRatings (TJ=25ºCunlessotherwisenoted) Parameter Symbol Rating Units RepetitivePeakReverseVoltage VRRM 650 V SurgePeakReversevoltage VRSM 650 V DCBlockingVoltage VDC 650 V Continuousforwardcurrent TC =25 ºC TC =135 ºC TC =150 ºC I F A RepetitivePeakForwardCurrent I FRM 56 A Surgenorepetitiveforwardcurrent IFSM 72 A PowerDissipation TC =25 ºC TC =110 ºC Ptot 107 46 W OperatingJunctionandstoragetemperature TJ,Tstg -55to+175 ºC 6. Thermalcharacteristics Parameter Symbol TestConditions Min Typ Max Units Thermalresistance Rth( J-C) - - 2.8 - ºC/W 7. Electricalcharacteristics Parameter Symbol Conditions Rating Unit Min Typ Max GateThresholdVoltage VF IF=8A TC=25°C - 1.4 1.8 V TC=175°C - 2.1 3 ReverseCurrent IR VR=650V TC=25°C - 10 60 μA TC=175°C - 48 500 TotalCapacitiveCharge Qc VR=400V,IF=8A TJ=25 °C vr QC=ò

0 C （V）dv

  • 25 - nC TotalCapacitance C TJ =25 °C, f=1MHz VR=0V 440 - pFVR=200V 54 VR=400V 40 CapacitanceStoredEnergy EC VR=400V - 5 - μJ 2of3 Rev1.0JULY2018

8A，650V SiliconCarbideDiodeKIA SEMICONDUCTORS 08065AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8. TypicalCharacteristics 3of3 Rev1.0JULY2018