SSM07N70CP ETC1

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www.SiliconStandard.com 1 of 6 N-channel Enhancement-mode Power MOSFET Dynamic dv/dt rating BVDSS 675V Repetitive Avalanche Rated RDS(ON) 1.2 Ω Fast Switching I D 7A Simple Drive Requirement

DESCRIPTION

VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID @ TC=25°C Continuous Drain Current, VGS @ 10V A ID @ TC=100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current1 A PD @ TC=25°C Total Power Dissipation W W/°C EAS Single Pulse Avalanche Energy2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG TJ Operating Junction Temperature Range THERMAL DATA Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.4 °C/W Rthj-a Thermal Resistance Junction-ambient Max. 62 °C/W 140 -55 to 150 °C Parameter Parameter Storage Temperature Range -55 to 150 °C Linear Derating Factor 0.7 4.4 Rating 675 The SSM07N70C series is specially designed as a main switching device for universal 90~265VAC off-line AC/DC converter applications. Both TO-220 and TO-262 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-220 and TO-262 packages are widely preferred for all commercial and industrial applications. The device is well suited for switch-mode power supplies, AC-DC converters and high-current high-speed switching circuits. ± 30 G DS TO-262 (R) G D S TO-220 (P) G D S SSM07N70CP,R-A 3/21/2005 Rev.2.01

www.SiliconStandard.com 2 of 6 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 675 - - V Δ BVDSS/ Δ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.6 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A - - 1.2 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=3.5A - 4.5 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=675V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge3 ID=7A - 32 - nC Qgs Gate-Source Charge VDS=480V - 8.6 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 9 - nC td(on) Turn-on Delay Time3 VDD=300V - 17 - ns tr Rise Time ID=7A - 15 - ns td(off) Turn-off Delay Time RG=10Ω, VGS=10V - 35 - ns tf Fall Time RD=43Ω -1 8- ns Ciss Input Capacitance V GS=0V - 2075 - pF Coss Output Capacitance V DS=25V - 120 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 7 A ISM Pulsed Source Current ( Body Diode )1 -- 1 8 A VSD Forward On Voltage3 Tj=25°C, IS=7A, VGS=0V - - 1.5 V Notes: 1.Pulse width limited by safe operating area. 2.Starting T j=25oC , VDD=50V , L=5mH , RG=25Ω , IAS=7A. 3.Pulse width <300us , duty cycle <2%. ±100± 30V SSM07N70CP,R-A 3/21/2005 Rev.2.01

www.SiliconStandard.com 3 of 6 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Normalized BVDSS vs. Junction Fig 4. Normalized On-Resistance Temperature vs. Junction Temperature 0.5 1.5 2.5 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized RDS(ON) V G =10V I D =3.5A 0.8 0.9 1.1 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Normalized BVDSS (V) 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =25 o C V G =6.0V V G =5.5V V G =5.0V V G =4.0V V G =10V 01 0 2 0 3 0 4 0 V DS , Drain-to-Source Voltage (V) ID , Drain Current (A) T C =150 o C V G =6.0V V G =5.5V V G =5.0V V G =4.0V V G =10V SSM07N70CP,R-A 3/21/2005 Rev.2.01

www.SiliconStandard.com 4 of 6 Fig 5. Maximum Drain Current vs. Fig 6. Typical Power Dissipation Case Temperature Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance 25 50 75 100 125 150 T c , Case Temperature ( o C) ID , Drain Current (A) 100 1 10 100 1000 10000 V DS (V) ID (A) T c =25 o C Single Pluse 10us 100us 1ms 10ms 100ms 100 0 50 100 150 Tc , Case Temperature( o C) PD (W) 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (R thjc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE SSM07N70CP,R-A 3/21/2005 Rev.2.01

www.SiliconStandard.com 5 of 6 Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs. Reverse Diode Junction Temperature -50 0 50 100 150 T j , Junction Temperature ( o C) VGS(th) (V) 0.01 0.1 100 V SD (V) IS (A) T j = 25 o C Tj = 150 o C 0 5 10 15 20 25 30 35 40 45 50 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =7A V DS =320V V DS =400V V DS =480V 100 10000 1 5 9 1 31 72 12 52 9 V DS (V) C (pF) f=1.0MHz Ciss Coss Crss SSM07N70CP,R-A 3/21/2005 Rev.2.01

www.SiliconStandard.com 6 of 6 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expre ss or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform td(on) tr td(off) tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 0.5x RATED VDS TO THE OSCILLOSCOPE 10 V D G S VDS VGS RG RD 0.8 x RATED V DS TO THE OSCILLOSCOPE D G S VDS VGS IDIG 1~ 3 mA SSM07N70CP,R-A 3/21/2005 Rev.2.01