06065A KIA
Document overview
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Technical content
6A，650V SiliconCarbideDiode S KIA SEMICONDUCTORS 06065AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Benefits n Highersafetymarginagainstovervoltage n Improvedefficiencyallloadconditions n IncreasedefficiencycomparedtoSiliconDiodealternatives n ReductionofHeatSinkRequirements n ParallelDevicesWithoutThermalRunaway n EssentialyNoSwitchingLosses 2.Features n 650-VoltSchottkyRectifier n Shorterrecoverytime n High-speedswitchingpossible n High-FrequencyOperation n Temperature-IndependentSwitchingBehavior n ExtremelyFastSwitching n PositiveTemperatureCoefficientonVF 3.Applications n SwitchModePowerSupplies n PowerFactorCorrection n MotorDrives n HIDLighting 4. Pinconfiguration 1of3 Rev1.0JULY2018 Pin Function
1 Cathode
3 Anode
6A，650V SiliconCarbideDiode S KIA SEMICONDUCTORS 06065AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. AbsoluteMaximumRatings (TJ=25ºCunlessotherwisenoted) Parameter Symbol Rating Units RepetitivePeakReverseVoltage VRRM 650 V SurgePeakReversevoltage VRSM 650 V DCBlockingVoltage VDC 650 V Continuousforwardcurrent TC =25 ºC TC =135 ºC TC =150 ºC I F A RepetitivePeakForwardCurrent I FRM 42 A Surgenorepetitiveforwardcurrent IFSM 54 A PowerDissipation TC =25 ºC TC =110 ºC Ptot 38 W OperatingJunctionandstoragetemperature TJ,Tstg -55to+175 ºC 6. Thermalcharacteristics Parameter Symbol TestConditions Min Typ Max Units Thermalresistance Rth( J-C) - - 3.2 - ºC/W 7. Electricalcharacteristics Parameter Symbol Conditions Rating Unit Min Typ Max GateThresholdVoltage VF IF=6A TC=25°C - 1.4 1.8 V TC=175°C - 2.1 3.0 ReverseCurrent IR VR=650V TC=25°C - 10 60 μA TC=175°C - 52 500 TotalCapacitiveCharge Qc VR=400V,IF=6A TJ=25 °C vr QC=ò
0 C （V）dv
- 21 - nC TotalCapacitance C TJ =25 °C, f=1MHz VR=0V 395 - pFVR=200V 49 VR=400V 33 CapacitanceStoredEnergy EC VR=400V - 4.4 - μJ 2of3 Rev1.0JULY2018
6A，650V SiliconCarbideDiode S KIA SEMICONDUCTORS 06065AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.TypicalCharacteristics 3of3 Rev1.0JULY2018